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Keywords = buried power rail (BPR)

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13 pages, 5736 KiB  
Article
A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET)
by Zhecheng Pan, Tao Liu, Jingwen Yang, Kun Chen, Saisheng Xu, Chunlei Wu, Min Xu and David Wei Zhang
Micromachines 2023, 14(9), 1751; https://doi.org/10.3390/mi14091751 - 7 Sep 2023
Cited by 3 | Viewed by 3980
Abstract
The complementary field-effect transistor (CFET) with N-type FET (NFET) stacked on P-type FET (PFET) is a promising device structure based on gate-all-around FET (GAAFET). Because of the high-density stacked structure, the self-heating effect (SHE) becomes more and more severe. Buried thermal rail (BTR) [...] Read more.
The complementary field-effect transistor (CFET) with N-type FET (NFET) stacked on P-type FET (PFET) is a promising device structure based on gate-all-around FET (GAAFET). Because of the high-density stacked structure, the self-heating effect (SHE) becomes more and more severe. Buried thermal rail (BTR) technology on top of the buried power rail (BPR) process is proposed to improve heat dissipation. Through a systematical 3D Technology Computer Aided Design (TCAD) simulation, compared to traditional CFET and CFET with BPR only, the thermal resistance (Rth) of CFET can be significantly reduced with BTR technology, while the drive capability is also improved. Furthermore, based on the proposed BTR technology, different power delivery structures of top-VDD–top-VSS (TDTS), bottom-VDD–bottom-VSS (BDBS), and bottom-VDD–top-VSS (BDTS) were investigated in terms of electrothermal and parasitic characteristics. The Rth of the BTR-BDTS structure is decreased by 5% for NFET and 9% for PFET, and the Ion is increased by 2% for NFET and 7% for PFET. Full article
(This article belongs to the Special Issue Recent Advances in CMOS Devices)
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