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Keywords = blue laser annealing (BLA)

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11 pages, 2855 KiB  
Article
Highly Sensitive, Stretchable Pressure Sensor Using Blue Laser Annealed CNTs
by Chanju Park, Munsu Choi, Suhui Lee, Hyunho Kim, Taeheon Lee, Mohammad Masum Billah, Byunglib Jung and Jin Jang
Nanomaterials 2022, 12(13), 2127; https://doi.org/10.3390/nano12132127 - 21 Jun 2022
Cited by 13 | Viewed by 3534
Abstract
A piezoresistive sensor is an essential component of wearable electronics that can detect resistance changes when pressure is applied. In general, microstructures of sensing layers have been adopted as an effective approach to enhance piezoresistive performance. However, the mold-casted microstructures typically have quite [...] Read more.
A piezoresistive sensor is an essential component of wearable electronics that can detect resistance changes when pressure is applied. In general, microstructures of sensing layers have been adopted as an effective approach to enhance piezoresistive performance. However, the mold-casted microstructures typically have quite a thick layer with dozens of microscales. In this paper, a carbon microstructure is formed by blue laser annealing (BLA) on a carbon nanotube (CNT) layer, which changes the surface morphology of CNTs into carbonaceous protrusions and increases its thickness more than four times compared to the as-deposited layer. Then, the pressure sensor is fabricated using a spin-coating of styrene–ethylene–butylene–styrene (SEBS) elastomer on the BLA CNTs layer. A 1.32 µm-thick pressure sensor exhibits a high sensitivity of 6.87 × 105 kPa−1, a wide sensing range of 278 Pa~40 kPa and a fast response/recovery time of 20 ms, respectively. The stability of the pressure sensor is demonstrated by the repeated loading and unloading of 20 kPa for 4000 cycles. The stretchable pressure sensor was also demonstrated using lateral CNT electrodes on SEBS surface, exhibiting stable pressure performance, with up to 20% stretching. Full article
(This article belongs to the Topic Advanced Nanomaterials for Sensing Applications)
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13 pages, 2669 KiB  
Article
Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry
by Jeongsang Pyo, Bohae Lee and Han-Youl Ryu
Micromachines 2021, 12(8), 999; https://doi.org/10.3390/mi12080999 - 22 Aug 2021
Cited by 10 | Viewed by 4668
Abstract
We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in an amorphous [...] Read more.
We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in an amorphous silicon (a-Si) thin film, and GLA and BLA experiments were conducted based on the thermal simulation results. The crystallinity of annealed poly Si samples was analyzed using Raman spectroscopy and spectroscopic ellipsometry. To evaluate the degree of crystallization for the annealed samples quantitatively, the measured spectra of laser-annealed poly Si were fitted to those of crystalline Si and a-Si, and the crystal volume fraction (fc) of the annealed poly Si sample was determined. Both the Raman spectroscopy and ellipsometry showed consistent results on fc. The fc values were found to reach >85% for optimum laser power of GLA and BLA, showing good crystallinity of the laser-annealed poly Si thin films comparable to thermal furnace annealing. Full article
(This article belongs to the Special Issue Nano Korea 2021)
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