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Keywords = VLWIR

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5 pages, 990 KiB  
Proceeding Paper
Very-Long-Wavelength Infrared Range Type-II Superlattice InAs/InAsSb GaAs/Immersed Photodetectors for High-Operating-Temperature Conditions
by Kacper Matuszelański, Krystian Michalczewski, Łukasz Kubiszyn, Waldemar Gawron and Piotr Martyniuk
Eng. Proc. 2023, 51(1), 45; https://doi.org/10.3390/engproc2023051045 - 27 Dec 2023
Cited by 1 | Viewed by 1293
Abstract
Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR) infrared ranges. In addition, theoretical simulations and experimental reports [...] Read more.
Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR) infrared ranges. In addition, theoretical simulations and experimental reports show high-performance T2SL devices in the very-long-wavelength infrared range (VLWIR) (cutoff wavelength, λc ≥ 12 μm). Devices in this wavelength range are essential for space-based applications. In VLWIR, the existing detectors with satisfactory performance are extrinsic silicon detectors operating under heavy, bulky and short-lifetime multistage cryocoolers. These disadvantages are mainly critical for space applications, and thus, developing a device exhibiting a higher operating temperature (HOT) is of high priority. We report on a photoconductive T2SL InAs/InAsSb detector with λc > 18 μm (limited by a GaAs substrate) and high-operating-temperature (HOT) conditions (T = 210–240 K) grown on thick semi-insulating GaA substrates by molecular beam epitaxy (MBE). Full article
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6 pages, 1655 KiB  
Communication
The Anti-Reflection Coating Design for the Very-Long-Wave Infrared Si-Based Blocked Impurity Band Detectors
by Zuoru Dong, Yangzhou Zhou, Yulu Chen, Jiajia Tao, Wenhui Liu, Xiaowan Dai, Bingbing Wang, Yifei Wu and Xiaodong Wang
Crystals 2023, 13(1), 60; https://doi.org/10.3390/cryst13010060 - 29 Dec 2022
Cited by 5 | Viewed by 2264
Abstract
An anti-reflection coating on a back-illuminated 128 × 128 array Si-based blocked impurity band (BIB) detector in a very-long-wave infrared range was designed in this work. The reflectance and transmittance spectra of ZnS films with different thicknesses on intrinsic Si substrates were studied [...] Read more.
An anti-reflection coating on a back-illuminated 128 × 128 array Si-based blocked impurity band (BIB) detector in a very-long-wave infrared range was designed in this work. The reflectance and transmittance spectra of ZnS films with different thicknesses on intrinsic Si substrates were studied with a FDTD simulation and experiment. Compared to bare Si substrate, the reflectance of Si coated with 1.5, 2.0, 2.5, and 3.0 μm thick ZnS significantly decreased, while the transmittance increased in the range of 10.0~25.0 μm band. The transmittance enhancement ratio reached approximately 32%, 32%, 28%, and 29%, respectively. It was evidenced that the enhanced transmission at a specific wavelength was caused by the effective interference cancellation effect. Then, a 2.0 μm thick ZnS thin film was deposited on the backside of the 128 × 128 array Si-based BIB detector. The spectral responsivity of the detector increased significantly. Additionally, the blackbody responsivity increased by approximately 36%, suggesting that the ZnS film is an ideal anti-reflection material for VLWIR detectors in the range of 10.0~25.0 μm band. Full article
(This article belongs to the Special Issue Metal–Semiconductor Photodetector)
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