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Keywords = Sentaurus device-QTX

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Article
On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET
by Jonghyeon Ha, Gyeongyeop Lee, Hagyoul Bae, Kihyun Kim, Jin-Woo Han and Jungsik Kim
Micromachines 2022, 13(8), 1276; https://doi.org/10.3390/mi13081276 - 8 Aug 2022
Viewed by 2963
Abstract
Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage reportedly reduces the on-state current [...] Read more.
Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage reportedly reduces the on-state current (Ion) in ordinary MOSFETs. In the case of an extremely scaled device such as a nanosheet field-effect transistor (NS-FET), the impact of displacement defect size was analyzed on the basis of the NS dimensions related to the device characteristics. In this study, we investigated the effect of displacement defects on NS-FETs using technology computer-aided design; the simulation model included quantum transport effects. The geometrical conditions, temperatures, trap concentrations, and scattering models were considered as the variables for on-state current reduction. Full article
(This article belongs to the Special Issue Feature Papers of Micromachines in Physics 2022)
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