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Keywords = DEPFET

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14 pages, 2860 KB  
Article
The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors
by Gerhard Lutz, Matteo Porro, Stefan Aschauer, Stefan Wölfel and Lothar Strüder
Sensors 2016, 16(5), 608; https://doi.org/10.3390/s16050608 - 28 Apr 2016
Cited by 14 | Viewed by 9817
Abstract
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. [...] Read more.
Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell. Full article
(This article belongs to the Special Issue Photon-Counting Image Sensors)
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