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Keywords = Czochralski-grown monocrystalline silicon

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13 pages, 5096 KB  
Article
Yield Performance of Standard Multicrystalline, Monocrystalline, and Cast-Mono Modules in Outdoor Conditions
by Ismael Guerrero, Carlos del Cañizo and Yuanjie Yu
Energies 2024, 17(18), 4544; https://doi.org/10.3390/en17184544 - 10 Sep 2024
Cited by 2 | Viewed by 1544
Abstract
On the journey to reduce the cost of solar modules, several silicon-growing techniques have been explored to grow the wafers the cells are based on. The most utilized ones have been the multicrystalline silicon (mc-Si) and the monocrystalline ones, with monocrystalline grown by [...] Read more.
On the journey to reduce the cost of solar modules, several silicon-growing techniques have been explored to grow the wafers the cells are based on. The most utilized ones have been the multicrystalline silicon (mc-Si) and the monocrystalline ones, with monocrystalline grown by the Czochralski (Cz) technique being the current winner. Cast-mono (CM-Si) was also largely employed during the last decade, and there are several gigawatts (GWs) of modules on the field, but no data were shared on the performance of those modules. In this study, we put three small installations next to each other in the field consisting of 12 modules each, with the only difference being in the wafers technology employed: mc-Si, CM-Si, and CZ-Si. The first two systems have been manufactured with the same equipment and had their field performance closely monitored for three years, while the CZ-Si one has been monitored for 17 months. The performance data shared show that CM-Si performance on the field is better than mc-Si and is very similar to CZ-Si, with no abnormal degradation. CM-Si requires less energy than CZ-Si to be manufactured, and high efficiencies have been reported; the field performance suggests that it is a very valid technology that deserves further exploration. Full article
(This article belongs to the Special Issue Photovoltaic Solar Cells and Systems: Fundamentals and Applications)
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10 pages, 2196 KB  
Article
Study on the Relationship between BO–LID and LeTID in Czochralski-Grown Monocrystalline Silicon
by Hailing Li, Xinxin Wang, Fang Lv, Yibo Wang, Shangzhi Cheng, Chunlan Zhou and Wenjing Wang
Energies 2020, 13(22), 5961; https://doi.org/10.3390/en13225961 - 15 Nov 2020
Cited by 5 | Viewed by 2388
Abstract
Most research about Light and elevated Temperature Induced Degradation (LeTID) is focused on multicrystalline silicon (mc-Si). In this work, the degradation kinetics of Czochralski-grown monocrystalline silicon (Cz-Si) induced by light at an elevated temperature were studied in detail. The lifetime evolutions over time [...] Read more.
Most research about Light and elevated Temperature Induced Degradation (LeTID) is focused on multicrystalline silicon (mc-Si). In this work, the degradation kinetics of Czochralski-grown monocrystalline silicon (Cz-Si) induced by light at an elevated temperature were studied in detail. The lifetime evolutions over time during (1) light soaking (LS), (2) dark annealing–light soaking (DA–LS), and (3) DA–LS cycling experiments were analyzed. Ratios of the capture coefficients for the electrons and holes (k-values) were used to characterize the possible defects responsible for degradation. We found that the behavior of degradation and recovery under light soaking with or without a dark annealing treatment was mostly like boron–oxygen (BO)-related degradation but gave k-values from 19 to 25. In the DA–LS cycling experiment, the max degradation amplitudes hardly changed from the second cycle, and the k-values decreased with an increase in the cycling number. We then analyzed the possible reactions in Cz-Si and discuss the relationship between BO defects and LeTID. Full article
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