Special Issue "High-k Materials and Devices 2014"

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (15 January 2014)

Special Issue Editor

Guest Editor
Prof. Dr. Durga Misra
Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07102 USA
Website: http://web.njit.edu/~dmisra/
E-Mail: dmisra@njit.edu

Special Issue Information

Dear Colleagues,

Advanced gate stacks with high dielectric constant materials (high-k) for complementary metal-oxide-semiconductor (CMOS) and memory applications in sub-22 nm feature size integrated circuits have been a subject of intense research in recent years. The main focus of the forthcoming special issue is to present a comprehensive overview to our readers by assembling state-of-the-art research articles and reviews on processing and characterization of high-k gate material. The topics covered by this special issue include high-k materials and deposition methods; Deposition on high-mobility substrate such as Ge, GaAs, and other III-V compounds; Interface passivation of substrate/high-k interface; Reliability of high-k material; Characterization techniques and Application to non-volatile memory systems.

Prof. Dr. Durga Misra
Guest Editor

Submission

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. Papers will be published continuously (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed Open Access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs).

Published Papers (6 papers)

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Displaying article 1-6
p. 5117-5145
by , ,  and
Materials 2014, 7(7), 5117-5145; doi:10.3390/ma7075117
Received: 15 January 2014; in revised form: 2 July 2014 / Accepted: 3 July 2014 / Published: 15 July 2014
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(This article belongs to the Special Issue High-k Materials and Devices 2014)
p. 3147-3159
by , ,  and
Materials 2014, 7(4), 3147-3159; doi:10.3390/ma7043147
Received: 21 January 2014; in revised form: 27 March 2014 / Accepted: 8 April 2014 / Published: 17 April 2014
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(This article belongs to the Special Issue High-k Materials and Devices 2014)
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p. 2913-2944
by
Materials 2014, 7(4), 2913-2944; doi:10.3390/ma7042913
Received: 27 January 2014; in revised form: 14 March 2014 / Accepted: 24 March 2014 / Published: 10 April 2014
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(This article belongs to the Special Issue High-k Materials and Devices 2014)
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p. 2669-2696
by ,  and
Materials 2014, 7(4), 2669-2696; doi:10.3390/ma7042669
Received: 13 January 2014; in revised form: 19 March 2014 / Accepted: 25 March 2014 / Published: 31 March 2014
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(This article belongs to the Special Issue High-k Materials and Devices 2014)
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p. 2301-2339
by  and
Materials 2014, 7(3), 2301-2339; doi:10.3390/ma7032301
Received: 18 January 2014; in revised form: 6 March 2014 / Accepted: 7 March 2014 / Published: 19 March 2014
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(This article belongs to the Special Issue High-k Materials and Devices 2014)
p. 2155-2182
by
Materials 2014, 7(3), 2155-2182; doi:10.3390/ma7032155
Received: 18 January 2014; in revised form: 13 February 2014 / Accepted: 14 February 2014 / Published: 13 March 2014
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(This article belongs to the Special Issue High-k Materials and Devices 2014)
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Last update: 30 July 2013

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