Special Issue "High-k Materials and Devices 2014"
Deadline for manuscript submissions: closed (15 January 2014)
Prof. Dr. Durga Misra
Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark, NJ 07102 USA
Advanced gate stacks with high dielectric constant materials (high-k) for complementary metal-oxide-semiconductor (CMOS) and memory applications in sub-22 nm feature size integrated circuits have been a subject of intense research in recent years. The main focus of the forthcoming special issue is to present a comprehensive overview to our readers by assembling state-of-the-art research articles and reviews on processing and characterization of high-k gate material. The topics covered by this special issue include high-k materials and deposition methods; Deposition on high-mobility substrate such as Ge, GaAs, and other III-V compounds; Interface passivation of substrate/high-k interface; Reliability of high-k material; Characterization techniques and Application to non-volatile memory systems.
Prof. Dr. Durga Misra
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. Papers will be published continuously (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed Open Access monthly journal published by MDPI.
Materials 2014, 7(4), 2913-2944; doi:10.3390/ma7042913
Received: 27 January 2014; in revised form: 14 March 2014 / Accepted: 24 March 2014 / Published: 10 April 2014| Download PDF Full-text (1040 KB)
Review: Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices
Materials 2014, 7(4), 2669-2696; doi:10.3390/ma7042669
Received: 13 January 2014; in revised form: 19 March 2014 / Accepted: 25 March 2014 / Published: 31 March 2014| Download PDF Full-text (1645 KB)
Materials 2014, 7(3), 2301-2339; doi:10.3390/ma7032301
Received: 18 January 2014; in revised form: 6 March 2014 / Accepted: 7 March 2014 / Published: 19 March 2014| Download PDF Full-text (1482 KB)
Review: A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
Materials 2014, 7(3), 2155-2182; doi:10.3390/ma7032155
Received: 18 January 2014; in revised form: 13 February 2014 / Accepted: 14 February 2014 / Published: 13 March 2014| Download PDF Full-text (1957 KB)
Last update: 30 July 2013