Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm
AbstractFlash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly. View Full-Text
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Zhao, C.; Zhao, C.Z.; Taylor, S.; Chalker, P.R. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm. Materials 2014, 7, 5117-5145.
Zhao C, Zhao CZ, Taylor S, Chalker PR. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm. Materials. 2014; 7(7):5117-5145.Chicago/Turabian Style
Zhao, Chun; Zhao, Ce Z.; Taylor, Stephen; Chalker, Paul R. 2014. "Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm." Materials 7, no. 7: 5117-5145.