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Materials 2014, 7(7), 5117-5145; doi:10.3390/ma7075117

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

1
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
2
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
3
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK
*
Author to whom correspondence should be addressed.
Received: 15 January 2014 / Revised: 2 July 2014 / Accepted: 3 July 2014 / Published: 15 July 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
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Abstract

Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly. View Full-Text
Keywords: non-volatile memory; flash; high-k dielectrics; charge trapping memory non-volatile memory; flash; high-k dielectrics; charge trapping memory
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Zhao, C.; Zhao, C.Z.; Taylor, S.; Chalker, P.R. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm. Materials 2014, 7, 5117-5145.

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