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Materials 2014, 7(3), 2155-2182; doi:10.3390/ma7032155

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, China
Received: 18 January 2014 / Revised: 13 February 2014 / Accepted: 14 February 2014 / Published: 13 March 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
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Abstract

Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses. View Full-Text
Keywords: high-k; resistive switching; RRAM; NVM; nanoscale; CAFM; oxygen vacancies; conductive filament; dielectric breakdown high-k; resistive switching; RRAM; NVM; nanoscale; CAFM; oxygen vacancies; conductive filament; dielectric breakdown
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Lanza, M. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope. Materials 2014, 7, 2155-2182.

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