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Materials 2014, 7(3), 2155-2182; doi:10.3390/ma7032155
Review

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

Received: 18 January 2014; in revised form: 13 February 2014 / Accepted: 14 February 2014 / Published: 13 March 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
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Abstract: Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, but on tuning the electrical resistance of the insulating layer by applying electrical stresses to reach a high resistive state (HRS or “0”) and a low resistive state (LRS or “1”), which makes the memory point. Some high-k dielectrics show this unusual property and in the last years high-k based RRAM have been extensively analyzed, especially at the device level. However, as resistance switching (in the most promising cells) is a local phenomenon that takes place in areas of ~100 nm2, the use of characterization tools with high lateral spatial resolution is necessary. In this paper the status of resistive switching in high-k materials is reviewed from a nanoscale point of view by means of conductive atomic force microscope analyses.
Keywords: high-k; resistive switching; RRAM; NVM; nanoscale; CAFM; oxygen vacancies; conductive filament; dielectric breakdown high-k; resistive switching; RRAM; NVM; nanoscale; CAFM; oxygen vacancies; conductive filament; dielectric breakdown
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Lanza, M. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope. Materials 2014, 7, 2155-2182.

AMA Style

Lanza M. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope. Materials. 2014; 7(3):2155-2182.

Chicago/Turabian Style

Lanza, Mario. 2014. "A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope." Materials 7, no. 3: 2155-2182.


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