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Materials 2014, 7(4), 2913-2944; doi:10.3390/ma7042913
Review

Emerging Applications for High K Materials in VLSI Technology

Received: 27 January 2014; in revised form: 14 March 2014 / Accepted: 24 March 2014 / Published: 10 April 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
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Abstract: The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing.
Keywords: high K; dielectric; CVD; ALD; contacts; CMOS; DRAM; resistive RAM; diode; patterning high K; dielectric; CVD; ALD; contacts; CMOS; DRAM; resistive RAM; diode; patterning
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Clark, R.D. Emerging Applications for High K Materials in VLSI Technology. Materials 2014, 7, 2913-2944.

AMA Style

Clark RD. Emerging Applications for High K Materials in VLSI Technology. Materials. 2014; 7(4):2913-2944.

Chicago/Turabian Style

Clark, Robert D. 2014. "Emerging Applications for High K Materials in VLSI Technology." Materials 7, no. 4: 2913-2944.


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