Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement
AbstractOxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. View Full-Text
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Zhao, C.; Zhao, C.Z.; Lu, Q.; Yan, X.; Taylor, S.; Chalker, P.R. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. Materials 2014, 7, 6965-6981.
Zhao C, Zhao CZ, Lu Q, Yan X, Taylor S, Chalker PR. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. Materials. 2014; 7(10):6965-6981.Chicago/Turabian Style
Zhao, Chun; Zhao, Ce Z.; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R. 2014. "Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement." Materials 7, no. 10: 6965-6981.