Next Article in Journal
Statistical Optimization for Acid Hydrolysis of Microcrystalline Cellulose and Its Physiochemical Characterization by Using Metal Ion Catalyst
Previous Article in Journal
New Methods of Enhancing the Thermal Durability of Silica Optical Fibers
Previous Article in Special Issue
Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm
Article Menu

Export Article

Open AccessArticle
Materials 2014, 7(10), 6965-6981; doi:10.3390/ma7106965

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

1
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
2
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
3
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK
Present address: Nano & Advanced Materials Institute, Hong Kong University of Science and Technology, Hong Kong
*
Author to whom correspondence should be addressed.
Received: 15 January 2014 / Revised: 29 September 2014 / Accepted: 8 October 2014 / Published: 13 October 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
View Full-Text   |   Download PDF [808 KB, uploaded 13 October 2014]   |  

Abstract

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. View Full-Text
Keywords: high-k dielectrics; lanthanide aluminum oxides; pulse capacitance-voltage (CV); oxide traps high-k dielectrics; lanthanide aluminum oxides; pulse capacitance-voltage (CV); oxide traps
Figures

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Zhao, C.; Zhao, C.Z.; Lu, Q.; Yan, X.; Taylor, S.; Chalker, P.R. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement. Materials 2014, 7, 6965-6981.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top