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Materials 2014, 7(4), 2669-2696; doi:10.3390/ma7042669
Review

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

1,* , 1,2
 and
1,*
1 Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA 2 Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge CB3 OHE, UK
* Authors to whom correspondence should be addressed.
Received: 13 January 2014 / Revised: 19 March 2014 / Accepted: 25 March 2014 / Published: 31 March 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
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Abstract

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.
Keywords: LaGdO3; gate oxide; high-k dielectrics; amorphous; optical; metal-oxide-semiconductor; metal-insulator-metal; equivalent oxide thickness LaGdO3; gate oxide; high-k dielectrics; amorphous; optical; metal-oxide-semiconductor; metal-insulator-metal; equivalent oxide thickness
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Pavunny, S.P.; Scott, J.F.; Katiyar, R.S. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices. Materials 2014, 7, 2669-2696.

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