Materials 2014, 7(4), 2669-2696; doi:10.3390/ma7042669
Review

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

1,* email, 1,2email and 1,* email
Received: 13 January 2014; in revised form: 19 March 2014 / Accepted: 25 March 2014 / Published: 31 March 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.
Keywords: LaGdO3; gate oxide; high-k dielectrics; amorphous; optical; metal-oxide-semiconductor; metal-insulator-metal; equivalent oxide thickness
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MDPI and ACS Style

Pavunny, S.P.; Scott, J.F.; Katiyar, R.S. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices. Materials 2014, 7, 2669-2696.

AMA Style

Pavunny SP, Scott JF, Katiyar RS. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices. Materials. 2014; 7(4):2669-2696.

Chicago/Turabian Style

Pavunny, Shojan P.; Scott, James F.; Katiyar, Ram S. 2014. "Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices." Materials 7, no. 4: 2669-2696.

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