Special Issue "Carbon Nanoelectronics"
A special issue of Electronics (ISSN 2079-9292).
Deadline for manuscript submissions: closed (30 August 2013)
Dr. Cory D. Cress
US Naval Research Laboratory, Washington, DC, USA
Interests: carbon nanotube field effect transistor (CNTFET); graphene field effect transistor (GFET); thin-film transistors; carbon nanoelectronics; flexible electronics; device characterization; non-equilibrium green's functions (NEGF); radiation effects
In this Special Issue of Electronics on Carbon Nanoelectronics, we seek novel reports and review papers related to carbon nanomaterials and their use in electronic devices spanning from advanced high-performance digital and analog nanoelectronics to low-cost, printed, transparent or flexible thin-film transistors. Novel research reports may include experimental fabrication approaches, novel device results, or advanced carbon nanoelectronic device characterization techniques. We are also interested in theoretical papers pertaining to topics that range from basic transport to circuit-level design addressing unique aspects of carbon nanoelectronic devices. Review papers must capture the state-of-the-field within a broad or niche market, benchmark the requirements of carbon nanoelectronic devices for market adoption, discuss general approaches to carbon nanoelectronic device fabrication and characterization, and/or provide future outlook perspectives on carbon nanoelectronic devices. The use of carbon nanomaterials as the channel material in scaled digital electronic devices may potentially yield enhanced performance and improved energy-efficiency. In radio frequency and microwave applications, extremely high-speed operation and linearity are two primary drivers of interest in carbon nanomaterials. Other advanced technologies, such as high-speed interconnects and 3D integrated circuits are currently under investigation and uniquely suited for carbon nanomaterials. In the displays and flexible electronics markets, speed and energy-efficiency requirements are relaxed in lieu of transparency, mechanical robustness, large-area manufacturability, cost, etc. This summary of carbon nanoelectronics applications is not exhaustive, but rather, is intended to provide a sense of the scope of this Special Issue. We will give all papers related to carbon nanoelectronic materials and devices full consideration for publication. To limit redundancy, authors of review papers are encouraged to communicate their topic and scope to the Guest Editor in advance of submission.
Dr. Cory D. Cress
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. Papers will be published continuously (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed Open Access quarterly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. For the first couple of issues the Article Processing Charge (APC) will be waived for well-prepared manuscripts. English correction and/or formatting fees of 250 CHF (Swiss Francs) will be charged in certain cases for those articles accepted for publication that require extensive additional formatting and/or English corrections.
- carbon nanotube field effect transistor (CNTFET)
- graphene field effect transistor (GFET)
- thin-film transistors
- carbon nanoelectronics
- flexible electronics
- device characterization
- non-equilibrium green’s functions (NEGF)
- radiation effects
Editorial: Carbon Nanoelectronics
Electronics 2014, 3(1), 22-25; doi:10.3390/electronics3010022
Received: 16 January 2014; in revised form: 21 January 2014 / Accepted: 21 January 2014 / Published: 27 January 2014| Download PDF Full-text (87 KB) | View HTML Full-text | Download XML Full-text
Electronics 2013, 2(4), 368-386; doi:10.3390/electronics2040368
Received: 11 September 2013; in revised form: 25 October 2013 / Accepted: 5 November 2013 / Published: 4 December 2013| Download PDF Full-text (669 KB) | View HTML Full-text | Download XML Full-text
Electronics 2013, 2(4), 332-367; doi:10.3390/electronics2040332
Received: 26 August 2013; in revised form: 17 September 2013 / Accepted: 18 September 2013 / Published: 30 September 2013| Download PDF Full-text (2305 KB) | View HTML Full-text | Download XML Full-text
Article: Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene
Electronics 2013, 2(3), 315-331; doi:10.3390/electronics2030315
Received: 13 June 2013; in revised form: 13 August 2013 / Accepted: 16 August 2013 / Published: 11 September 2013| Download PDF Full-text (841 KB) | View HTML Full-text | Download XML Full-text
Review: Carbon Nanotubes and Graphene Nanoribbons: Potentials for Nanoscale Electrical Interconnects
Electronics 2013, 2(3), 280-314; doi:10.3390/electronics2030280
Received: 22 May 2013; in revised form: 8 August 2013 / Accepted: 14 August 2013 / Published: 28 August 2013| Download PDF Full-text (9730 KB) | View HTML Full-text | Download XML Full-text
Article: Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)
Electronics 2013, 2(3), 234-245; doi:10.3390/electronics2030234
Received: 28 March 2013; in revised form: 30 June 2013 / Accepted: 10 July 2013 / Published: 24 July 2013| Download PDF Full-text (790 KB) | View HTML Full-text | Download XML Full-text
Article: Effects of Localized Trap-States and Corrugation on Charge Transport in Graphene Nanoribbons
Electronics 2013, 2(2), 178-191; doi:10.3390/electronics2020178
Received: 2 April 2013; in revised form: 9 May 2013 / Accepted: 10 May 2013 / Published: 21 May 2013| Download PDF Full-text (1842 KB)
Last update: 9 September 2013