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Electronics 2013, 2(3), 234-245; doi:10.3390/electronics2030234
Article

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

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Received: 28 March 2013 / Revised: 30 June 2013 / Accepted: 10 July 2013 / Published: 24 July 2013
(This article belongs to the Special Issue Carbon Nanoelectronics)
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Abstract

This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.
Keywords: graphene; field-effect-transistors (FETs); total ionizing dose (TID); radiation; conductivity; mobility graphene; field-effect-transistors (FETs); total ionizing dose (TID); radiation; conductivity; mobility
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Esqueda, I.S.; Cress, C.D.; Anderson, T.J.; Ahlbin, J.R.; Bajura, M.; Fritze, M.; Moon, J.-S. Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs). Electronics 2013, 2, 234-245.

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