Electronics 2014, 3(1), 22-25; doi:10.3390/electronics3010022

Carbon Nanoelectronics

Received: 16 January 2014; in revised form: 21 January 2014 / Accepted: 21 January 2014 / Published: 27 January 2014
(This article belongs to the Special Issue Carbon Nanoelectronics)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Note: In lieu of an abstract, this is an excerpt from the first page.

Excerpt: Initiated by the first single-walled carbon nanotube (SWCNT) transistors [1,2], and reinvigorated with the isolation of graphene [3], the field of carbon-based nanoscale electronic devices and components (Carbon Nanoelectronics for short) has developed at a blistering pace [4]. Comprising a vast number of scientists and engineers that span materials science, physics, chemistry, and electronics, this field seeks to provide an evolutionary transition path to address the fundamental scaling limitations of silicon CMOS [5]. Concurrently, researchers are actively investigating the use of carbon nanomaterials in applications including back-end interconnects, high-speed optoelectronic applications [6], spin-transport [7], spin tunnel barrier [8], flexible electronics, and many more. [...]
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MDPI and ACS Style

Cress, C.D. Carbon Nanoelectronics. Electronics 2014, 3, 22-25.

AMA Style

Cress CD. Carbon Nanoelectronics. Electronics. 2014; 3(1):22-25.

Chicago/Turabian Style

Cress, Cory D. 2014. "Carbon Nanoelectronics." Electronics 3, no. 1: 22-25.

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