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Graphene and Graphene Nanomesh Spintronics
Electronics 2014, 3(1), 22-25; doi:10.3390/electronics3010022

Carbon Nanoelectronics

U.S. Naval Research Laboratory, Washington DC, 20375, USA
Received: 16 January 2014 / Revised: 21 January 2014 / Accepted: 21 January 2014 / Published: 27 January 2014
(This article belongs to the Special Issue Carbon Nanoelectronics)
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Note: In lieu of an abstract, this is an excerpt from the first page.


Initiated by the first single-walled carbon nanotube (SWCNT) transistors [1,2], and reinvigorated with the isolation of graphene [3], the field of carbon-based nanoscale electronic devices and components (Carbon Nanoelectronics for short) has developed at a blistering pace [4]. Comprising a vast number of scientists and engineers that span materials science, physics, chemistry, and electronics, this field seeks to provide an evolutionary transition path to address the fundamental scaling limitations of silicon CMOS [5]. Concurrently, researchers are actively investigating the use of carbon nanomaterials in applications including back-end interconnects, high-speed optoelectronic applications [6], spin-transport [7], spin tunnel barrier [8], flexible electronics, and many more. [...]
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Cress, C.D. Carbon Nanoelectronics. Electronics 2014, 3, 22-25.

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