Next Article in Journal / Special Issue
Graphene and Graphene Nanomesh Spintronics
Previous Article in Journal / Special Issue
Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene
Article Menu

Export Article

Open AccessReview
Electronics 2013, 2(4), 332-367; doi:10.3390/electronics2040332

Variability and Reliability of Single-Walled Carbon Nanotube Field Effect Transistors

1
Soft Matter Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, OH 45433, USA
2
Biological and Nanoscale Technologies, UES Inc., Dayton, OH 45432, USA 
Received: 26 August 2013 / Revised: 17 September 2013 / Accepted: 18 September 2013 / Published: 30 September 2013
(This article belongs to the Special Issue Carbon Nanoelectronics)
View Full-Text   |   Download PDF [2305 KB, uploaded 30 September 2013]   |  

Abstract

Excellent electrical performance and extreme sensitivity to chemical species in semiconducting Single-Walled Carbon NanoTubes (s-SWCNTs) motivated the study of using them to replace silicon as a next generation field effect transistor (FET) for electronic, optoelectronic, and biological applications. In addition, use of SWCNTs in the recently studied flexible electronics appears more promising because of SWCNTs’ inherent flexibility and superior electrical performance over silicon-based materials. All these applications require SWCNT-FETs to have a wafer-scale uniform and reliable performance over time to a level that is at least comparable with the currently used silicon-based nanoscale FETs. Due to similarity in device configuration and its operation, SWCNT-FET inherits most of the variability and reliability concerns of silicon-based FETs, namely the ones originating from line edge roughness, metal work-function variation, oxide defects, etc. Additional challenges arise from the lack of chirality control in as-grown and post-processed SWCNTs and also from the presence of unstable hydroxyl (–OH) groups near the interface of SWCNT and dielectric. In this review article, we discuss these variability and reliability origins in SWCNT-FETs. Proposed solutions for mitigating each of these sources are presented and a future perspective is provided in general, which are required for commercial use of SWCNT-FETs in future nanoelectronic applications. View Full-Text
Keywords: single-walled carbon nanotube; field effect transistor; variability; reliability; hydroxyl group passivation; oxide defect; hysteresis; noise; radiation dose; degradation single-walled carbon nanotube; field effect transistor; variability; reliability; hydroxyl group passivation; oxide defect; hysteresis; noise; radiation dose; degradation
Figures

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Islam, A.E. Variability and Reliability of Single-Walled Carbon Nanotube Field Effect Transistors. Electronics 2013, 2, 332-367.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top