E-Mail Alert

Add your e-mail address to receive forthcoming issues of this journal:

Journal Browser

Journal Browser

Special Issue "Selected Papers from IEEE ICICE 2017"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: 1 March 2018

Special Issue Editors

Guest Editor
Prof. Dr. Shoou-Jinn Chang

Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Website | E-Mail
Phone: +886 6 2757575 ext 62391
Fax: +886 6 2761854
Interests: optical and electronic sensors; semi-conductive materials; nanotechnology
Guest Editor
Prof. Teen-Hang Meen

Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
Website | E-Mail
Interests: photovoltaic device; dye-sensitized solar cells; nanotechnology
Guest Editor
Dr. Stephen D. Prior

Aeronautics, Astronautics and Computational Engineering, University of Southampton, Southampton SO17 1BJ, UK
Website | E-Mail
Interests: microsystem design; nanotechnology; applied science

Special Issue Information

Dear Colleagues,

2017 IEEE International Conference on Information, Communication and Engineering (ICICE 2017) will be held in Xiamen, Fujian, P.R. China on November 17–20, 2017, and will provide a unified communication platform for researchers in a wide area of topics. Scientists all over the world actively want to discover new advanced materials in electrical and mechanical engineering. In recent years, the applications of advanced materials have been highly developing fields, in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. The scopes of ICICE 2017 are not only encompasses material sizes at the nanoscale, but also in various dimensions where the onset of size dependent phenomena usually enables novel applications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. The full experimental details must be provided so that the results can be reproduced.

This special issue selects excellent papers from ICICE 2017 and covers the following scopes, including fundamental and advanced materials of electrical and mechanical engineering, their synthesis and engineering, their application on optical sensors, magnetic, acoustic, and thermal transduction, their integration with many elements, designing of electrical or mechanical devices, evaluation various performance and exploring their broad applications in industry, environmental control, material analysis, etc. We invite investigators to contribute original research articles, as well as review articles, to this special issue. Potential topics include, but are not limited to:

  • Developments of advanced materials for new electrical and optical properties
  • Nanomaterials for preparation and applications
  • Combinatorial methods of advanced materials for mechanical design and optimization
  • Advanced materials for preparation and applications
  • Subjects related to electronic thin films and coating technology
  • Synthesis engineering of advanced materials
  • Advanced materials in mechatronics applications
  • Class of materials include ceramics, glasses, polymers (plastics), semiconductors, etc.

Prof. Dr. Shoou-Jinn Chang
Prof. Teen-Hang Meen
Dr. Stephen D. Prior  
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Developments of advanced materials for new electrical and optical properties
  • Nanomaterials for preparation and applications
  • Combinatorial methods of advanced materials for mechanical design and optimization
  • Advanced materials for preparation and applications
  • Subjects related to electronic thin films and coating technology
  • Synthesis engineering of advanced materials
  • Advanced materials in mechatronics applications

Published Papers (6 papers)

View options order results:
result details:
Displaying articles 1-6
Export citation of selected articles as:

Research

Open AccessArticle A Composite Photocatalyst Based on Hydrothermally-Synthesized Cu2ZnSnS4 Powders
Materials 2018, 11(1), 158; doi:10.3390/ma11010158
Received: 31 October 2017 / Revised: 17 January 2018 / Accepted: 17 January 2018 / Published: 19 January 2018
PDF Full-text (9372 KB) | HTML Full-text | XML Full-text
Abstract
A novel composite photocatalyst based on Cu2ZnSnS4 (CZTS) powders was synthesized and investigated for use as a photocatalyst. CZTS powders were first made using a conventional hydrothermal method and were then used to grow silver nanoparticles hybridized onto the CZTS
[...] Read more.
A novel composite photocatalyst based on Cu2ZnSnS4 (CZTS) powders was synthesized and investigated for use as a photocatalyst. CZTS powders were first made using a conventional hydrothermal method and were then used to grow silver nanoparticles hybridized onto the CZTS under various conditions through a microwave-assisted hydrothermal process. After the obtained samples were subsequently mixed with 1T-2H MoS2, the three synthesized component samples were characterized using X-ray diffractometry (XRD), scanning electron microscopy, transmission electron microscopy (FE-SEM, FE-TEM), UV-visible spectroscopy (UV-Vis), Brunauer-Emmet-Teller (BET), photoluminescence spectroscopy (PL), and X-ray photoelectron spectroscopy (XPS). The resulting samples were also used as photocatalysts for the degradation of methylene blue (MB) under a 300 W halogen lamp simulating sunlight with ~5% UV light. The photodegradation ability was greatly enhanced by the addition of Ag and 1T-2H MoS2. Excellent photodegradation of MB was obtained under visible light. The effects of material characteristics on the photodegradation were investigated and discussed. Full article
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
Figures

Figure 1

Open AccessArticle Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure
Materials 2018, 11(1), 90; doi:10.3390/ma11010090
Received: 2 December 2017 / Revised: 4 January 2018 / Accepted: 4 January 2018 / Published: 8 January 2018
PDF Full-text (2918 KB) | HTML Full-text | XML Full-text
Abstract
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30
[...] Read more.
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV. Full article
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
Figures

Figure 1

Open AccessFeature PaperArticle Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors
Materials 2018, 11(1), 46; doi:10.3390/ma11010046
Received: 31 October 2017 / Revised: 28 December 2017 / Accepted: 28 December 2017 / Published: 28 December 2017
PDF Full-text (5179 KB) | HTML Full-text | XML Full-text
Abstract
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be
[...] Read more.
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. Full article
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
Figures

Figure 1

Open AccessArticle Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin
Materials 2018, 11(1), 32; doi:10.3390/ma11010032
Received: 30 October 2017 / Revised: 21 December 2017 / Accepted: 21 December 2017 / Published: 26 December 2017
PDF Full-text (5418 KB) | HTML Full-text | XML Full-text
Abstract
This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy
[...] Read more.
This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications. Full article
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
Figures

Figure 1

Open AccessArticle Wear Behavior and Microstructure of Mg-Sn Alloy Processed by Equal Channel Angular Extrusion
Materials 2017, 10(11), 1315; doi:10.3390/ma10111315
Received: 17 October 2017 / Revised: 9 November 2017 / Accepted: 9 November 2017 / Published: 16 November 2017
PDF Full-text (4359 KB) | HTML Full-text | XML Full-text
Abstract
Mg-5wt.% Sn alloy is often used in portable electronic devices and automobiles. In this study, mechanical properties of Mg-5wt.% Sn alloy processed by Equal Channel Angular Extrusion (ECAE) were characterized. More precisely, its hardness and wear behavior were measured using Vickers hardness test
[...] Read more.
Mg-5wt.% Sn alloy is often used in portable electronic devices and automobiles. In this study, mechanical properties of Mg-5wt.% Sn alloy processed by Equal Channel Angular Extrusion (ECAE) were characterized. More precisely, its hardness and wear behavior were measured using Vickers hardness test and a pin-on-disc wear test. The microstructures of ECAE-processed Mg-Sn alloys were investigated by scanning electron microscope and X-ray diffraction. ECAE process refined the grain sizes of the Mg-Sn alloy from 117.6 μm (as-cast) to 88.0 μm (one pass), 49.5 μm (two passes) and 24.4 μm (four passes), respectively. Meanwhile, the hardness of the alloy improved significantly. The maximum wear resistance achieved in the present work was around 73.77 m/mm3, which was obtained from the Mg-Sn alloy treated with a one-pass ECAE process with a grain size of 88.0 μm. The wear resistance improvement was caused by the grain size refinement and the precipitate of the second phase, Mg2Sn against the oxidation of the processed alloy. The as-cast Mg-Sn alloy with the larger grain size, i.e., 117.6 μm, underwent wear mechanisms, mainly adhesive wear and abrasive wear. In ECAE-processed Mg-Sn alloy, high internal energy occurred due to the high dislocation density and the stress field produced by the plastic deformation, which led to an increased oxidation rate of the processed alloy during sliding. Therefore, the oxidative wear and a three-body abrasive wear in which the oxide debris acted as the three-body abrasive components became the dominant factors in the wear behavior, and as a result, reduced the wear resistance in the multi-pass ECAE-processed alloy. Full article
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
Figures

Figure 1

Open AccessArticle Fiber-Optic Thermal Sensor for TiN Film Crack Monitoring
Materials 2017, 10(11), 1297; doi:10.3390/ma10111297
Received: 29 September 2017 / Revised: 2 November 2017 / Accepted: 7 November 2017 / Published: 11 November 2017
PDF Full-text (4177 KB) | HTML Full-text | XML Full-text
Abstract
The study focuses on the thermal and temperature sensitivity behavior of an optical fiber sensor device. In this article, a titanium nitride (TiN)-coated fiber Bragg grating (FBG) sensor fabricated using an ion beam sputtering system was investigated. The reflection spectra of the FBG
[...] Read more.
The study focuses on the thermal and temperature sensitivity behavior of an optical fiber sensor device. In this article, a titanium nitride (TiN)-coated fiber Bragg grating (FBG) sensor fabricated using an ion beam sputtering system was investigated. The reflection spectra of the FBG sensor were tested using R-soft optical software to simulate the refractive index sensitivity. In these experiments, the temperature sensitivity of the TiN FBG was measured at temperatures ranging from 100 to 500 °C using an optical spectrum analyzer (OSA). The results showed that the temperature sensitivity of the proposed TiN FBG sensor reached 12.8 pm/°C for the temperature range of 100 to 300 °C and 20.8 pm/°C for the temperature range of 300 to 500 °C. Additionally, we found that the produced oxidation at temperatures of 400-500 °C caused a crack, with the crack becoming more and more obvious at higher and higher temperatures. Full article
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
Figures

Figure 1

Back to Top