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Micromachines
Special Issues
NANO KOREA 2020
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NANO KOREA 2020

A special issue of Micromachines (ISSN 2072-666X).

Deadline for manuscript submissions: closed (31 August 2020) | Viewed by 6155

Special Issue Editors

Prof. Dr. Junhong Min

E-Mail Website
Guest Editor
School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
Interests: atomic force microscopy; electrical/electrochemical nanobiosensors; optical nanobiosensors; biochips; BioMEMS and BioNEMS; nanobiomaterials for environments; nanotechnology for bio-robotics; nanotechnology for tissue engineering and regenerative medicine; nanomaterials and nanotechnology in drug and gene delivery; nano-toxicology; sample preparation; molecular diagnostic system; bioanalytical engineering
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Dae Joon Kang

E-Mail Website
Guest Editor
Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
Interests: synthesis of 2D atomic crystals and their device applications; synthesis of metal oxides and their device physics; electrohydrodynamic lithography; atomic layer deposition
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Won Seok Chang

E-Mail Website
Guest Editor
1. Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Republic of Korea
2. Department of Nano-Mechatronics, Korea University of Science and Technology (UST), Daejeon 34113, Republic of Korea
Interests: quantum dots; semiconductors; metals; nanolithography; photolithography; nanoimprint; scanning probe lithography; 3D printing; atomic force microscopy; carbon nanotube; flexible device; stretchable device; nanometrology; ultrafast laser processing; laser scanning microscopy; nanomaterial-based flexible device; maskless digital lithography
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Wan Soo Yun

E-Mail Website
Guest Editor
Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea
Interests: nanobiosensor; nano-analysis; nanomaterials; nanomanufacturing
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Jong-Ryul Jeong

E-Mail Website
Guest Editor
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Korea
Interests: nanomagnetic materials; spin caloritronics; plasmonic nanostructures; magnetoplasmonics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue will publish selected papers from the 18th International Nanotech Symposium & Nano-Convergence Exhibition (NANO KOREA 2020), 1–3 July 2020, KINTEX, Korea.

In particular, the symposium, which is the largest symposium on nanoscale science and technology in Korea, will be a meaningful occasion to confirm major research results and up-to-date research trends, increase exchange among researchers in relevant fields, and materialize the results of research. The NANO KOREA symposium will cover the following main topics:

  • Nanoelectronics and photonics;
  • Advanced nanomaterials;
  • Nanofabrication and measurement;
  • Nanobiotechnology and nanomedicine;
  • Nanotechnology for energy;
  • Safety, standardization, and regulation in nanotechnology;
  • Sensors and actuators;
  • Computational nanoscience and technology.

Papers attracting the most interest at the conference, or that provide novel contributions, will be selected for publication in Micromachines. These papers will be peer-reviewed for the validation of research results, developments, and applications.

Prof. Dr. Junhong Min
Prof. Dr. Dae Joon Kang
Prof. Dr. Won Seok Chang
Prof. Dr. Wan Soo Yun
Prof. Dr. Jong-Ryul Jeong
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Micro/Nanofabrication
  • Nanoelectronics
  • Bionanotechnology
  • Nanomaterials
  • Computational materials design

Published Papers (2 papers)

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Research

12 pages, 4455 KiB  
Article
3D AND-Type Stacked Array for Neuromorphic Systems
by Taejin Jang, Suhyeon Kim, Jeesoo Chang, Kyung Kyu Min, Sungmin Hwang, Kyungchul Park, Jong-Ho Lee and Byung-Gook Park
Micromachines 2020, 11(9), 829; https://doi.org/10.3390/mi11090829 - 31 Aug 2020
Cited by 4 | Viewed by 2511
Abstract
NOR/AND flash memory was studied in neuromorphic systems to perform vector-by-matrix multiplication (VMM) by summing the current. Because the size of NOR/AND cells exceeds those of other memristor synaptic devices, we proposed a 3D AND-type stacked array to reduce the cell size. Through [...] Read more.
NOR/AND flash memory was studied in neuromorphic systems to perform vector-by-matrix multiplication (VMM) by summing the current. Because the size of NOR/AND cells exceeds those of other memristor synaptic devices, we proposed a 3D AND-type stacked array to reduce the cell size. Through a tilted implantation method, the conformal sources and drains of each cell could be formed, with confirmation by a technology computer aided design (TCAD) simulation. In addition, the cell-to-cell variation due to the etch slope could be eliminated by controlling the deposition thickness of the cells. The suggested array can be beneficial in simple program/inhibit schemes given its use of Fowler–Nordheim (FN) tunneling because the drain lines and source lines are parallel. Therefore, the conductance of each synaptic device can be updated at low power level. Full article
(This article belongs to the Special Issue NANO KOREA 2020)
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10 pages, 3031 KiB  
Article
Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor
by Jang Hyun Kim, Hyun Woo Kim, Young Suh Song, Sangwan Kim and Garam Kim
Micromachines 2020, 11(8), 780; https://doi.org/10.3390/mi11080780 - 15 Aug 2020
Cited by 16 | Viewed by 3031
Abstract
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves. [...] Read more.
In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves. The first one is the on-state current (ION) variation, the second one is the hump current (IHUMP) variation, and the last one is ambipolar current (IAMB) variation. According to the simulation results, the ION variation is sensitive depending on the size of the tunneling region and could be reduced by increasing the tunneling region. However, the IHUMP and IAMB variations are relatively irrelevant to the size of the tunneling region. In order to analyze the cause of this difference, we investigated the band-to-band tunneling (BTBT) rate according to WFV cases. The results show that when ION is formed in L-shaped TFET, the BTBT rate relies on the WFV in the whole region of the gate because the tunnel barrier is formed in the entire area where the source and the gate meet. On the other hand, when the IHUMP and IAMB are formed in L-shaped TFET, the BTBT rate relies on the WFV in the edge of the gate. Full article
(This article belongs to the Special Issue NANO KOREA 2020)
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