E-Mail Alert

Add your e-mail address to receive forthcoming issues of this journal:

Journal Browser

Journal Browser

Special Issue "Magnetoresistance Effects and Their Application to Spintronic Devices"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 December 2017)

Special Issue Editors

Guest Editor
Prof. Dr. Koki Takanashi

Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendal 980-77, Japan
Website | E-Mail
Interests: spintronics; nanomagnetism; ordered alloys
Guest Editor
Prof. Dr. Atsufumi Hirohata

Development of Electronics, University of York, Heslington, York YO10 5DD, UK
Website | E-Mail
Interests: spintronics; half-metallic ferromagnets; quantum nanoelectronics; nano-spintronic devices

Special Issue Information

Dear Colleagues,

Half-metallic ferromagnets have been attracting intensive research in the view of realising an ideal 100% spin-polarised ferromagnet at room temperature. Among such ferromagnets, Heusler alloys have the greatest potential due to their high Curie temperatures, good lattice matching with major substrates, large minority-spin band-gap, and large magnetic moments in general. In this Special Issue, we focus on their magnetoresistance, in both vertical and lateral junctions, formed with a non-magnetic metallic or insulating layer. These junctions can be implemented in a read sensor in a hard disk drive or in a cell of magnetic random access memory to improve their recording density and operation efficiency. We intend to cover from theory and fundamentals of such junctions to their applications.

Prof. Dr. Koki Takanashi
Prof. Dr. Atsufumi Hirohata
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • heusler alloys
  • giant magnetoresistance
  • tunnel magnetoresistance
  • half-metallic ferromagnets

Published Papers (4 papers)

View options order results:
result details:
Displaying articles 1-4
Export citation of selected articles as:

Research

Jump to: Review

Open AccessFeature PaperArticle Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
Materials 2018, 11(1), 150; doi:10.3390/ma11010150
Received: 23 December 2017 / Revised: 10 January 2018 / Accepted: 15 January 2018 / Published: 17 January 2018
PDF Full-text (826 KB) | HTML Full-text | XML Full-text
Abstract
We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends
[...] Read more.
We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures. Full article
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
Figures

Figure 1

Open AccessArticle Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor
Materials 2017, 10(10), 1134; doi:10.3390/ma10101134
Received: 1 August 2017 / Revised: 10 September 2017 / Accepted: 15 September 2017 / Published: 26 September 2017
PDF Full-text (6109 KB) | HTML Full-text | XML Full-text
Abstract
In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains
[...] Read more.
In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an example of how TMR sensing technology can play a relevant role in the management and control of electrical energy. Full article
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
Figures

Figure 1

Review

Jump to: Research

Open AccessReview Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions
Materials 2018, 11(1), 105; doi:10.3390/ma11010105
Received: 21 December 2017 / Revised: 4 January 2018 / Accepted: 5 January 2018 / Published: 11 January 2018
PDF Full-text (3444 KB) | HTML Full-text | XML Full-text
Abstract
For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a
[...] Read more.
For the sustainable development of spintronic devices, a half-metallic ferromagnetic film needs to be developed as a spin source with exhibiting 100% spin polarisation at its Fermi level at room temperature. One of the most promising candidates for such a film is a Heusler-alloy film, which has already been proven to achieve the half-metallicity in the bulk region of the film. The Heusler alloys have predominantly cubic crystalline structures with small magnetocrystalline anisotropy. In order to use these alloys in perpendicularly magnetised devices, which are advantageous over in-plane devices due to their scalability, lattice distortion is required by introducing atomic substitution and interfacial lattice mismatch. In this review, recent development in perpendicularly-magnetised Heusler-alloy films is overviewed and their magnetoresistive junctions are discussed. Especially, focus is given to binary Heusler alloys by replacing the second element in the ternary Heusler alloys with the third one, e.g., MnGa and MnGe, and to interfacially-induced anisotropy by attaching oxides and metals with different lattice constants to the Heusler alloys. These alloys can improve the performance of spintronic devices with higher recording capacity. Full article
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
Figures

Figure 1

Open AccessReview Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application
Materials 2018, 11(1), 47; doi:10.3390/ma11010047
Received: 19 November 2017 / Revised: 16 December 2017 / Accepted: 16 December 2017 / Published: 28 December 2017
PDF Full-text (1838 KB) | HTML Full-text | XML Full-text
Abstract
The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications
[...] Read more.
The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect. Full article
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
Figures

Figure 1

Back to Top