Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application
AbstractThe magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect. View Full-Text
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Liu, P.; Lin, X.; Xu, Y.; Zhang, B.; Si, Z.; Cao, K.; Wei, J.; Zhao, W. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application. Materials 2018, 11, 47.
Liu P, Lin X, Xu Y, Zhang B, Si Z, Cao K, Wei J, Zhao W. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application. Materials. 2018; 11(1):47.Chicago/Turabian Style
Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng. 2018. "Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application." Materials 11, no. 1: 47.
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