Next Article in Journal
Study on Zinc Oxide-Based Electrolytes in Low-Temperature Solid Oxide Fuel Cells
Next Article in Special Issue
Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions
Previous Article in Journal
Reconfigurable Coplanar Waveguide (CPW) and Half-Mode Substrate Integrated Waveguide (HMSIW) Band-Stop Filters Using a Varactor-Loaded Metamaterial-Inspired Open Resonator
Previous Article in Special Issue
Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor
Article Menu
Issue 1 (January) cover image

Export Article

Open AccessReview
Materials 2018, 11(1), 47; https://doi.org/10.3390/ma11010047

Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application

1
Fert Beijing Research Institute, School of Electrical and Information Engineering, Big Data and Brain Computing Center (BDBC), Beihang University, Beijing 100191, China
2
Beihang-Geortek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
3
Institut Jean Lamour, CNRS UMR 7198, Université de Lorraine, 54506 Vandœuvre-lès-Nancy, France
*
Authors to whom correspondence should be addressed.
Received: 19 November 2017 / Revised: 16 December 2017 / Accepted: 16 December 2017 / Published: 28 December 2017
(This article belongs to the Special Issue Magnetoresistance Effects and Their Application to Spintronic Devices)
View Full-Text   |   Download PDF [1838 KB, uploaded 28 December 2017]   |  

Abstract

The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect. View Full-Text
Keywords: spintronics; magnetoresistance effect; optically tunable; interlayer exchange coupling; data storage spintronics; magnetoresistance effect; optically tunable; interlayer exchange coupling; data storage
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Liu, P.; Lin, X.; Xu, Y.; Zhang, B.; Si, Z.; Cao, K.; Wei, J.; Zhao, W. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application. Materials 2018, 11, 47.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top