Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
AbstractWe study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures. View Full-Text
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Yamada, M.; Fujita, Y.; Yamada, S.; Sawano, K.; Hamaya, K. Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts. Materials 2018, 11, 150.
Yamada M, Fujita Y, Yamada S, Sawano K, Hamaya K. Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts. Materials. 2018; 11(1):150.Chicago/Turabian Style
Yamada, Michihiro; Fujita, Yuichi; Yamada, Shinya; Sawano, Kentarou; Hamaya, Kohei. 2018. "Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts." Materials 11, no. 1: 150.
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