Special Issue "High-k Materials and Devices"

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A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 December 2011)

Special Issue Editor

Guest Editor
Dr. Koji Kita
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Website: http://www.adam.t.u-tokyo.ac.jp/
E-Mail: kita@adam.t.u-tokyo.ac.jp
Phone: +81 3 5841 7161
Fax: +81 3 5841 7161
Interests: dielectric materials; high-k; germanium FETs; interface properties

Published Papers (10 papers)

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Displaying article 1-10
p. 2370-2381
by
Materials 2014, 7(3), 2370-2381; doi:10.3390/ma7032370
Received: 3 January 2014; in revised form: 10 March 2014 / Accepted: 12 March 2014 / Published: 20 March 2014
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(This article belongs to the Special Issue High-k Materials and Devices)
p. 1413-1438
by
Materials 2012, 5(8), 1413-1438; doi:10.3390/ma5081413
Received: 2 June 2012; in revised form: 24 July 2012 / Accepted: 26 July 2012 / Published: 17 August 2012
Show/Hide Abstract | Cited by 11 | PDF Full-text (2103 KB)
(This article belongs to the Special Issue High-k Materials and Devices)
p. 1297-1335
by  and
Materials 2012, 5(7), 1297-1335; doi:10.3390/ma5071297
Received: 12 May 2012; in revised form: 10 July 2012 / Accepted: 16 July 2012 / Published: 24 July 2012
Show/Hide Abstract | Cited by 17 | PDF Full-text (856 KB)
(This article belongs to the Special Issue High-k Materials and Devices)
p. 1005-1032
by , , , , ,  and
Materials 2012, 5(6), 1005-1032; doi:10.3390/ma5061005
Received: 28 December 2011; in revised form: 24 April 2012 / Accepted: 11 May 2012 / Published: 1 June 2012
Show/Hide Abstract | Cited by 4 | PDF Full-text (717 KB)
(This article belongs to the Special Issue High-k Materials and Devices)
p. 644-660
by , , ,  and
Materials 2012, 5(4), 644-660; doi:10.3390/ma5040644
Received: 5 January 2012; in revised form: 27 March 2012 / Accepted: 29 March 2012 / Published: 13 April 2012
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(This article belongs to the Special Issue High-k Materials and Devices)
p. 575-589
by , , ,  and
Materials 2012, 5(4), 575-589; doi:10.3390/ma5040575
Received: 3 March 2012; in revised form: 26 March 2012 / Accepted: 28 March 2012 / Published: 10 April 2012
Show/Hide Abstract | Cited by 1 | PDF Full-text (2004 KB)
(This article belongs to the Special Issue High-k Materials and Devices)
p. 512-527
by
Materials 2012, 5(3), 512-527; doi:10.3390/ma5030512
Received: 27 February 2012; in revised form: 5 March 2012 / Accepted: 8 March 2012 / Published: 19 March 2012
Show/Hide Abstract | Cited by 4 | PDF Full-text (881 KB)
(This article belongs to the Special Issue High-k Materials and Devices)
p. 443-477
by
Materials 2012, 5(3), 443-477; doi:10.3390/ma5030443
Received: 7 January 2012; in revised form: 8 February 2012 / Accepted: 6 March 2012 / Published: 14 March 2012
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(This article belongs to the Special Issue High-k Materials and Devices)
p. 478-500
by
Materials 2012, 5(3), 478-500; doi:10.3390/ma5030478
Received: 29 January 2012; in revised form: 11 February 2012 / Accepted: 6 March 2012 / Published: 14 March 2012
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(This article belongs to the Special Issue High-k Materials and Devices)
abstract graphic
p. 404-414
by , , , , , , , ,  and
Materials 2012, 5(3), 404-414; doi:10.3390/ma5030404
Received: 7 December 2011; in revised form: 18 January 2012 / Accepted: 4 March 2012 / Published: 8 March 2012
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(This article belongs to the Special Issue High-k Materials and Devices)
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Last update: 27 February 2014

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