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Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate
Oerlikon USA, Inc., Business Unit Systems, 970 Lake Carillon Dr, Suite 300, St. Petersburg, FL 33716, USA
OC Oerlikon Balzers AG, Business Unit Systems, Iramali 18, P.O. Box 1000, Balzers LI-9496, Liechtenstein
* Author to whom correspondence should be addressed.
Received: 5 January 2012; in revised form: 27 March 2012 / Accepted: 29 March 2012 / Published: 13 April 2012
Abstract: Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2) and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.
Keywords: thin film capacitors; barium titanate; high-k
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MDPI and ACS Style
Reynolds, G.J.; Kratzer, M.; Dubs, M.; Felzer, H.; Mamazza, R. Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate. Materials 2012, 5, 644-660.
Reynolds GJ, Kratzer M, Dubs M, Felzer H, Mamazza R. Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate. Materials. 2012; 5(4):644-660.
Reynolds, Glyn J.; Kratzer, Martin; Dubs, Martin; Felzer, Heinz; Mamazza, Robert. 2012. "Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate." Materials 5, no. 4: 644-660.