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Materials 2012, 5(3), 404-414; doi:10.3390/ma5030404

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
Sumitomo Chemical Co., Ltd, Tsukuba, Ibaraki 300-3294, Japan
Department of Electrical Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
Author to whom correspondence should be addressed.
Received: 7 December 2011 / Revised: 18 January 2012 / Accepted: 4 March 2012 / Published: 8 March 2012
(This article belongs to the Special Issue High-k Materials and Devices)
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Interface-formation processes in atomic layer deposition (ALD) of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH3)3 (trimethylaluminum, TMA) adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.
Keywords: InGaAs; Al2O3; ALD; MISFET; trimethylaluminum InGaAs; Al2O3; ALD; MISFET; trimethylaluminum
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Jevasuwan, W.; Urabe, Y.; Maeda, T.; Miyata, N.; Yasuda, T.; Yamada, H.; Hata, M.; Taoka, N.; Takenaka, M.; Takagi, S. Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials 2012, 5, 404-414.

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