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Materials 2012, 5(3), 404-414; doi:10.3390/ma5030404

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

1,* , 1
1 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan 2 Sumitomo Chemical Co., Ltd, Tsukuba, Ibaraki 300-3294, Japan 3 Department of Electrical Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
* Author to whom correspondence should be addressed.
Received: 7 December 2011 / Revised: 18 January 2012 / Accepted: 4 March 2012 / Published: 8 March 2012
(This article belongs to the Special Issue High-k Materials and Devices)
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Interface-formation processes in atomic layer deposition (ALD) of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH3)3 (trimethylaluminum, TMA) adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.
Keywords: InGaAs; Al2O3; ALD; MISFET; trimethylaluminum InGaAs; Al2O3; ALD; MISFET; trimethylaluminum
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Jevasuwan, W.; Urabe, Y.; Maeda, T.; Miyata, N.; Yasuda, T.; Yamada, H.; Hata, M.; Taoka, N.; Takenaka, M.; Takagi, S. Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials 2012, 5, 404-414.

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