Materials 2012, 5(6), 1005-1032; doi:10.3390/ma5061005
Review

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

1email, 1,2,3,* email, 2,3email, 3email, 3,4email, 3email and 4email
Received: 28 December 2011; in revised form: 24 April 2012 / Accepted: 11 May 2012 / Published: 1 June 2012
(This article belongs to the Special Issue High-k Materials and Devices)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: In capacitance-voltage (C-V) measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value), that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate) and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS) capacitor) on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS) law, the Kohlrausch-Williams-Watts (KWW) relationship and the Havriliak-Negami (HN) relationship. Dielectric relaxation mechanisms are also discussed.
Keywords: high-k dielectrics; frequency dispersion; dielectric relaxation
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MDPI and ACS Style

Tao, J.; Zhao, C.Z.; Zhao, C.; Taechakumput, P.; Werner, M.; Taylor, S.; Chalker, P.R. Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements. Materials 2012, 5, 1005-1032.

AMA Style

Tao J, Zhao CZ, Zhao C, Taechakumput P, Werner M, Taylor S, Chalker PR. Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements. Materials. 2012; 5(6):1005-1032.

Chicago/Turabian Style

Tao, J.; Zhao, C. Z.; Zhao, C.; Taechakumput, P.; Werner, M.; Taylor, S.; Chalker, P. R. 2012. "Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements." Materials 5, no. 6: 1005-1032.

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