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Special Issue "Wide Bandgap Semiconductors: Growth, Properties and Applications"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (1 October 2017)

Special Issue Editors

Guest Editor
Prof. Dr. Shijie Xu

Department of Physics, The University of Hong Kong, Hong Kong, China
Website | E-Mail
Interests: optical properties and optoelectronic device applications of wide bandgap semiconductors including their heterostructures and nanostructures
Guest Editor
Prof. Dr. Yue Hao

School of Microelectronics, Xidian University, Xi’an, China
Website | E-Mail
Interests: materials and devices of wide bandgap semiconductors; micro- and nano-scale devices and reliability of semiconductors

Special Issue Information

Dear Colleagues,

In this Special Issue, we would like to call for state-of-the-art research and development in wide bandgap (WBG) semiconductors including nitrides, oxides and silicon carbides. The latest results and progresses in growth, properties and device applications of these WBG semiconductors are particularly welcome.

WBG semiconductors, including III-V nitrides, II-VI oxides, and IV silicon carbides, are essential to our technology future. For example, they are the fundamental materials of emerging solid-state lighting and high-temperature/high-power electronics and microelectronics. In the past double decades, WBG semiconductors have experienced fast and significant progresses in all the aspects from material growth to device applications. As the guest editors, we believe that now it could be a good time to edit and publish a special issue in the international journal of Materials for WBG semiconductors.

For more than 50 years, silicon chips have been the basis of microelectronics including power electronics. However, silicon chips are approaching their limits in size, power conversion and even physical principle. Another big limit of silicon is its extremely low light emission efficiency due to its indirect bandgap nature. These big limits of Si chips limit applications of Si in LEDs and power electronics. Meanwhile, these severe limits of Si chips also offer a great chance for scientists to develop WBG semiconductors, especially for applications in LEDs and power electronics. WBG semiconductors are capable of working at high temperatures, frequencies and voltages -all helping to eliminate up to 90 percent of the power losses in electricity conversion compared to current Si-based technology. This in turn means that WBG semiconductor-based power electronics including LEDs can be smaller, more efficient and cost less.

In this Special Issue, we solicit review articles, original research papers, and short communications covering all aspects of WBG semiconductors, from growth, characterization to device applications. Potential authors are invited to contact the Guest Editors prior to submission if they are uncertain whether their work falls within the general scope of this Special Issue.

Prof. Dr. Shijie Xu
Prof. Dr. Yue Hao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Wide bandgap semiconductors
  • Growth
  • Characterization
  • LEDs
  • LDs
  • Power electronics

Published Papers (1 paper)

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Research

Open AccessArticle A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing
Materials 2017, 10(5), 482; doi:10.3390/ma10050482
Received: 2 March 2017 / Revised: 24 April 2017 / Accepted: 27 April 2017 / Published: 30 April 2017
PDF Full-text (1880 KB) | HTML Full-text | XML Full-text
Abstract
Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current
[...] Read more.
Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, Jmax, is nearly 40 A/cm2, which is much lower than that reported by other studies. The reported Jmax, measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the Jmax to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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