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Special Issue "Wide Bandgap Semiconductors: Growth, Properties and Applications"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (1 October 2017)

Special Issue Editors

Guest Editor
Prof. Dr. Shijie Xu

Department of Physics, The University of Hong Kong, Hong Kong, China
Website | E-Mail
Interests: optical properties and optoelectronic device applications of wide bandgap semiconductors including their heterostructures and nanostructures
Guest Editor
Prof. Dr. Yue Hao

School of Microelectronics, Xidian University, Xi’an, China
Website | E-Mail
Interests: materials and devices of wide bandgap semiconductors; micro- and nano-scale devices and reliability of semiconductors

Special Issue Information

Dear Colleagues,

In this Special Issue, we would like to call for state-of-the-art research and development in wide bandgap (WBG) semiconductors including nitrides, oxides and silicon carbides. The latest results and progresses in growth, properties and device applications of these WBG semiconductors are particularly welcome.

WBG semiconductors, including III-V nitrides, II-VI oxides, and IV silicon carbides, are essential to our technology future. For example, they are the fundamental materials of emerging solid-state lighting and high-temperature/high-power electronics and microelectronics. In the past double decades, WBG semiconductors have experienced fast and significant progresses in all the aspects from material growth to device applications. As the guest editors, we believe that now it could be a good time to edit and publish a special issue in the international journal of Materials for WBG semiconductors.

For more than 50 years, silicon chips have been the basis of microelectronics including power electronics. However, silicon chips are approaching their limits in size, power conversion and even physical principle. Another big limit of silicon is its extremely low light emission efficiency due to its indirect bandgap nature. These big limits of Si chips limit applications of Si in LEDs and power electronics. Meanwhile, these severe limits of Si chips also offer a great chance for scientists to develop WBG semiconductors, especially for applications in LEDs and power electronics. WBG semiconductors are capable of working at high temperatures, frequencies and voltages -all helping to eliminate up to 90 percent of the power losses in electricity conversion compared to current Si-based technology. This in turn means that WBG semiconductor-based power electronics including LEDs can be smaller, more efficient and cost less.

In this Special Issue, we solicit review articles, original research papers, and short communications covering all aspects of WBG semiconductors, from growth, characterization to device applications. Potential authors are invited to contact the Guest Editors prior to submission if they are uncertain whether their work falls within the general scope of this Special Issue.

Prof. Dr. Shijie Xu
Prof. Dr. Yue Hao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Wide bandgap semiconductors
  • Growth
  • Characterization
  • LEDs
  • LDs
  • Power electronics

Published Papers (4 papers)

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Research

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Open AccessArticle Two B-C-O Compounds: Structural, Mechanical Anisotropy and Electronic Properties under Pressure
Materials 2017, 10(12), 1413; doi:10.3390/ma10121413
Received: 16 October 2017 / Revised: 16 November 2017 / Accepted: 8 December 2017 / Published: 11 December 2017
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Abstract
The structural, stability, mechanical, elastic anisotropy and electronic properties of two ternary light element compounds, B2CO2 and B6C2O5, are systematically investigated. The elastic constants and phonon calculations reveal that B2CO2 and
[...] Read more.
The structural, stability, mechanical, elastic anisotropy and electronic properties of two ternary light element compounds, B2CO2 and B6C2O5, are systematically investigated. The elastic constants and phonon calculations reveal that B2CO2 and B6C2O5 are both mechanically and dynamically stable at ambient pressure, and they can stably exist to a pressure of 20 GPa. Additionally, it is found that B2CO2 and B6C2O5 are wide-gap semiconductor materials with indirect energy gaps of 5.66 and 5.24 eV, respectively. The hardness calculations using the Lyakhov-Oganov model show that B2CO2 is a potential superhard material. Furthermore, the hardness of B6C2O5 is 29.6 GPa, which is relatively softer and more easily machinable compared to the B2CO2 (41.7 GPa). The elastic anisotropy results show that B6C2O5 exhibits a greater anisotropy in the shear modulus, while B2CO2 exhibits a greater anisotropy in Young’s modulus at ambient pressure. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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Open AccessArticle A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing
Materials 2017, 10(5), 482; doi:10.3390/ma10050482
Received: 2 March 2017 / Revised: 24 April 2017 / Accepted: 27 April 2017 / Published: 30 April 2017
Cited by 1 | PDF Full-text (1880 KB) | HTML Full-text | XML Full-text
Abstract
Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current
[...] Read more.
Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, Jmax, is nearly 40 A/cm2, which is much lower than that reported by other studies. The reported Jmax, measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the Jmax to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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Review

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Open AccessReview A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes
Materials 2017, 10(11), 1233; doi:10.3390/ma10111233
Received: 1 October 2017 / Revised: 22 October 2017 / Accepted: 24 October 2017 / Published: 26 October 2017
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Abstract
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also
[...] Read more.
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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Open AccessFeature PaperReview On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
Materials 2017, 10(10), 1221; doi:10.3390/ma10101221
Received: 5 September 2017 / Revised: 7 October 2017 / Accepted: 11 October 2017 / Published: 24 October 2017
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Abstract
The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by
[...] Read more.
The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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