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Materials 2017, 10(10), 1221; https://doi.org/10.3390/ma10101221

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

1
Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin 300401, China
2
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
*
Authors to whom correspondence should be addressed.
Received: 5 September 2017 / Revised: 7 October 2017 / Accepted: 11 October 2017 / Published: 24 October 2017
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
View Full-Text   |   Download PDF [2532 KB, uploaded 26 October 2017]   |  

Abstract

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. View Full-Text
Keywords: III-nitride semiconductor; multiple quantum well; light-emitting diode; hole injection efficiency; external quantum efficiency; internal quantum efficiency III-nitride semiconductor; multiple quantum well; light-emitting diode; hole injection efficiency; external quantum efficiency; internal quantum efficiency
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Li, L.; Zhang, Y.; Xu, S.; Bi, W.; Zhang, Z.-H.; Kuo, H.-C. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes. Materials 2017, 10, 1221.

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