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Materials 2017, 10(11), 1233; https://doi.org/10.3390/ma10111233

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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Received: 1 October 2017 / Revised: 22 October 2017 / Accepted: 24 October 2017 / Published: 26 October 2017
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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Abstract

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. View Full-Text
Keywords: light-emitting diodes (LEDs); efficiency droop; GaN; InGaN; multiple quantum wells (MQWs); carrier lifetime light-emitting diodes (LEDs); efficiency droop; GaN; InGaN; multiple quantum wells (MQWs); carrier lifetime
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Wang, L.; Jin, J.; Mi, C.; Hao, Z.; Luo, Y.; Sun, C.; Han, Y.; Xiong, B.; Wang, J.; Li, H. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes. Materials 2017, 10, 1233.

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