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Materials 2017, 10(5), 482; doi:10.3390/ma10050482

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing

The Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Authors to whom correspondence should be addressed.
Academic Editor: Shijie Xu
Received: 2 March 2017 / Revised: 24 April 2017 / Accepted: 27 April 2017 / Published: 30 April 2017
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
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Carrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, Jmax, is nearly 40 A/cm2, which is much lower than that reported by other studies. The reported Jmax, measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the Jmax to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. View Full-Text
Keywords: laser diodes; efficiency droop; stimulated emission; Auger recombination laser diodes; efficiency droop; stimulated emission; Auger recombination

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Feng, M.-X.; Sun, Q.; Liu, J.-P.; Li, Z.-C.; Zhou, Y.; Zhang, S.-M.; Yang, H. A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing. Materials 2017, 10, 482.

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