A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing
AbstractCarrier recombination behavior in c-plane GaN-based laser diodes (LDs) is numerically investigated by using the commercial software LASTIP. It is found that efficiency droop phenomenon does exist in GaN-based LDs before lasing, which is confirmed by experimental results. However, the current density corresponding to the peak efficiency of GaN-based LDs before lasing, Jmax, is nearly 40 A/cm2, which is much lower than that reported by other studies. The reported Jmax, measured from the cavity facet side is modulated by the absorption of quantum wells, which shifts the Jmax to a higher value. In addition, the currents due to various recombinations are calculated. It is found that Auger recombination affects the threshold current greatly, but it only plays a small role at high current injection levels. View Full-Text
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Feng, M.-X.; Sun, Q.; Liu, J.-P.; Li, Z.-C.; Zhou, Y.; Zhang, S.-M.; Yang, H. A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing. Materials 2017, 10, 482.
Feng M-X, Sun Q, Liu J-P, Li Z-C, Zhou Y, Zhang S-M, Yang H. A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing. Materials. 2017; 10(5):482.Chicago/Turabian Style
Feng, Mei-Xin; Sun, Qian; Liu, Jian-Ping; Li, Zeng-Cheng; Zhou, Yu; Zhang, Shu-Ming; Yang, Hui. 2017. "A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing." Materials 10, no. 5: 482.
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