E-Mail Alert

Add your e-mail address to receive forthcoming issues of this journal:

Journal Browser

Journal Browser

Special Issue "Silicon Nanophotonics"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (31 December 2016)

Special Issue Editors

Guest Editor
Prof. Dr. Seppo Honkanen

Institute of Photonics, University of Eastern Finland, Yliopistonranta 1, 70210 Kuopio, Finland
Website | E-Mail
Interests: guided-wave optics; telecommunications application; sensors
Guest Editor
Prof. Dr. Matthieu Roussey

Institute of Photonics, University of Eastern Finland, Yliopistonranta 1, 70210 Kuopio, Finland
Website | E-Mail
Interests: lab-on-chip; lab-on-fiber; integrated telecommunication components; novel waveguide platforms; atomic layer deposition for photonics; SERS; bio-applications
Guest Editor
Dr. Antti Säynätjoki

School of Electrical Engineering, Department of Micro- and Nanosciences, Aalto University, FI-00076 Aalto, Finland
Website | E-Mail

Special Issue Information

Dear Colleagues,

The dream of building low-loss, low-consumption, fast and small devices that manipulate light in fully-integrated circuits is becoming more and more feasible with regards to the incredible advances made in Silicon Photonics and Nanophotoncis over the past few decades.

The scope of this Special Issue of Materials is dedicated to “Silicon Nanophotonics”. Such a large topic covers areas as varied as optical telecommunications, data centers, high-performance computing, medical applications, sensing and bio-sensing, space and aeronautics, energy harvesting, light emitters, and detectors.

An important part of the topic also concerns the tools and the techniques we develop in terms of design, fabrication, and characterization of the different nano-components. Silicon is usually not the only material involved in the devices, and heterogeneous integration platforms are already playing a key role in the domain: research studies have focused on the integration of, for example, Ge, III/V semiconductors, and other thin films on silicon nanophotonic devices, as well as efforts to utilize nanostructures fabricated on silicon-on-insulator, silicon-on-oxidized silicon, amorphous silicon, etc.

It is a pleasure to invite you to submit a manuscript for this Special Issue. Full-length research manuscripts, short communications, and reviews are welcome.

Prof. Seppo Honkanen
Dr. Matthieu Roussey
Dr. Antti Säynätjoki
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Integrated optics
  • Nanophotonics
  • Telecommunications
  • Energy
  • Sensors
  • Micro- and nanotechnology
  • Micro- and nanofabrication
  • MOEMS
  • NOEMS

Published Papers (5 papers)

View options order results:
result details:
Displaying articles 1-5
Export citation of selected articles as:

Research

Open AccessArticle Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy
Materials 2017, 10(2), 140; doi:10.3390/ma10020140
Received: 29 December 2016 / Revised: 1 February 2017 / Accepted: 4 February 2017 / Published: 8 February 2017
Cited by 1 | PDF Full-text (1588 KB) | HTML Full-text | XML Full-text
Abstract
Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN) nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the
[...] Read more.
Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN) nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the origin and properties of this waveguide background luminescence (WGBL) is essential to developing mitigation strategies. Here, we identify the dominating component of the WGBL spectrum composed of a broad Raman scattering due to momentum selection-rule breaking in amorphous materials, and several peaks specific to molecules embedded in the core. We determine the maximum of the Raman scattering efficiency of the WGBL at room temperature for 785 nm excitation to be 4.5 ± 1 × 10−9 cm−1·sr−1, at a Stokes shift of 200 cm−1. This efficiency decreases monotonically for higher Stokes shifts. Additionally, we also demonstrate the use of slotted waveguides and quasi-transverse magnetic polarization as some mitigation strategies. Full article
(This article belongs to the Special Issue Silicon Nanophotonics)
Figures

Figure 1

Open AccessArticle An 8-Channel Wavelength MMI Demultiplexer in Slot Waveguide Structures
Materials 2016, 9(11), 881; doi:10.3390/ma9110881
Received: 10 August 2016 / Revised: 1 October 2016 / Accepted: 26 October 2016 / Published: 1 November 2016
Cited by 7 | PDF Full-text (2223 KB) | HTML Full-text | XML Full-text
Abstract
We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operate at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm, and 1565 nm. Gallium nitride (GaN) surrounded by silicon (Si) was found
[...] Read more.
We propose a novel 8-channel wavelength multimode interference (MMI) demultiplexer in slot waveguide structures that operate at 1530 nm, 1535 nm, 1540 nm, 1545 nm, 1550 nm, 1555 nm, 1560 nm, and 1565 nm. Gallium nitride (GaN) surrounded by silicon (Si) was found to be a suitable material for the slot-waveguide structures. The proposed device was designed by seven 1 × 2 MMI couplers, fourteen S-bands, and one input taper. Numerical investigations were carried out on the geometrical parameters using a full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can transmit 8-channel that works in the whole C-band (1530–1565 nm) with low crosstalk (−19.97–−13.77 dB) and bandwidth (1.8–3.6 nm). Thus, the device can be very useful in optical networking systems that work on dense wavelength division multiplexing (DWDM) technology. Full article
(This article belongs to the Special Issue Silicon Nanophotonics)
Figures

Figure 1

Open AccessArticle Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
Materials 2016, 9(10), 803; doi:10.3390/ma9100803
Received: 26 July 2016 / Revised: 13 September 2016 / Accepted: 14 September 2016 / Published: 27 September 2016
Cited by 2 | PDF Full-text (4729 KB) | HTML Full-text | XML Full-text
Abstract
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile
[...] Read more.
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L) and injection current density (J) with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures. Full article
(This article belongs to the Special Issue Silicon Nanophotonics)
Figures

Figure 1

Open AccessArticle Compact Holographic Projection Display Using Liquid-Crystal-on-Silicon Spatial Light Modulator
Materials 2016, 9(9), 768; doi:10.3390/ma9090768
Received: 30 July 2016 / Revised: 29 August 2016 / Accepted: 5 September 2016 / Published: 9 September 2016
PDF Full-text (4906 KB) | HTML Full-text | XML Full-text
Abstract
This paper presents a holographic projection display in which a phase-only spatial light modulator (SLM) performs three functions: beam shaping, image display, and speckle reduction. The functions of beam shaping and image display are performed by dividing the SLM window into four sub-windows
[...] Read more.
This paper presents a holographic projection display in which a phase-only spatial light modulator (SLM) performs three functions: beam shaping, image display, and speckle reduction. The functions of beam shaping and image display are performed by dividing the SLM window into four sub-windows loaded with different diffractive phase elements (DPEs). The DPEs are calculated using a modified iterative Fourier transform algorithm (IFTA). The function of speckle reduction is performed using temporal integration of display images containing speckles. The speckle contrast ratio of the display image is 0.39 due to the integration of eight speckled images. The system can be extended to display full-color images also by using temporal addition of elementary color images. Because the system configuration needs only an SLM, a Fourier transform lens, and two mirrors, the system volume is very small, becoming a potential candidate for micro projectors. Full article
(This article belongs to the Special Issue Silicon Nanophotonics)
Figures

Open AccessArticle A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon–Gallium-Nitride Slot Waveguide Structures
Materials 2016, 9(7), 516; doi:10.3390/ma9070516
Received: 7 May 2016 / Revised: 14 June 2016 / Accepted: 17 June 2016 / Published: 25 June 2016
Cited by 2 | PDF Full-text (2391 KB) | HTML Full-text | XML Full-text
Abstract
In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)–gallium nitride (GaN) slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as
[...] Read more.
In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)–gallium nitride (GaN) slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530–1565 nm) into four output ports with low insertion losses (0.07 dB). Full article
(This article belongs to the Special Issue Silicon Nanophotonics)

Journal Contact

MDPI AG
Materials Editorial Office
St. Alban-Anlage 66, 4052 Basel, Switzerland
E-Mail: 
Tel. +41 61 683 77 34
Fax: +41 61 302 89 18
Editorial Board
Contact Details Submit to Materials Edit a special issue Review for Materials
logo
loading...
Back to Top