Special Issue "Compound Semiconductor Materials"

Guest Editor
Prof. Dr. Jagdish Narayan
Department of Materials Science and Engineering, EB I, Room 3030, North Carolina State University, 911 Partners Way, Raleigh, NC 27695-7907, USA
Website: http://www.mse.ncsu.edu/profile/narayan
E-Mail: j_narayan@ncsu.edu
Phone: +1 919 515 7874
Fax: +1 919 515 7642
Interests: ion implantation and defects in semiconductors; rapid thermal and transient thermal processing of semiconductors; laser-solid interactions; doping, diffusion and gettering in semiconductors and supersaturated semiconductor alloys for advanced electronic devices; high temperature superconductors; diamond and diamond-like thin films; atomic scale characterization of defects and interfaces; physical and chemical vapor deposition of thin films; pulsed laser deposition; Laser-MBE; atomic-resolution electron microscopy; electrical and optical properties; modeling of thin film growth and defects and interfaces; novel approaches to thin film epitaxy; semiconductor thin film heterostructures and solid-state devices; and nanostructured materials

Guest Editor
Dr. C. Lewis Reynolds Jr.
Department of Materials Science and Engineering, EB I, Room 3002C, North Carolina State University, 911 Partners Way, Raleigh, NC 27695-7907, USA
Website: http://www.mse.ncsu.edu/profile/clreynol
E-Mail: lew_reynolds@ncsu.edu
Phone: +1 919 515 7622
Interests: compound semiconductor materials and devices; electrical and optical properties; thin film epitaxial growth of group III-nitrides and group II-oxides; heteroepitaxy; strain relaxation in misfit systems; defects and interfaces; quantum well structures; electronic and photonic devices; nanostructured materials

Dear Colleagues,

This special issue on Compound Semiconductor Materials will focus on thin film heterostructures of III-Vs, III-nitrides, II-oxides and perovskite-based materials across the misfit scale. Strain relaxation in large misfit systems involves both dislocation nucleation and propagation, which are more difficult in the nitride and oxide materials systems. Special emphasis will be placed on management of stresses and strains, defects and interfaces, and interactions of defects and chemistry at the nanoscale to create device-worthy materials. The volume will address the details of synthesis and processing, nanoscale characterization, novel electronic, photonic and magnetic properties, structure-property correlations, modeling and solid-state devices. It will include both layered and self-assembled nanostructures in the form of nanodots, rods and tubes. It is anticipated that the growth of novel thin film heterostructures with minimal defects will enable the next generation device structures, integration of multiple functionalities on a wafer for nanophotonics and nanoelectronics, and smart structures and sensors.

Prof. Jagdish (Jay) Narayan
Dr. C. Lew Reynolds
Guest Editors

Submission

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are refereed through a peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed Open Access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs).

• III-V materials
• III-nitrides
• II-oxides
• thin film epitaxy
• heteroepitaxy
• misfit scale
• nanostructures
• integration on Si
• solar cells
• electronic devices
• photonic devices