Special Issue "Compound Semiconductor Materials"

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A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (30 November 2012)

Special Issue Editors

Guest Editor
Prof. Dr. Jagdish Narayan
Department of Materials Science and Engineering, EB I, Room 3030, North Carolina State University, 911 Partners Way, Raleigh, NC 27695-7907, USA
Website: http://www.mse.ncsu.edu/profile/narayan
E-Mail: j_narayan@ncsu.edu
Phone: +1 919 515 7874
Fax: +1 919 515 7642
Interests: ion implantation and defects in semiconductors; rapid thermal and transient thermal processing of semiconductors; laser-solid interactions; doping, diffusion and gettering in semiconductors and supersaturated semiconductor alloys for advanced electronic devices; high temperature superconductors; diamond and diamond-like thin films; atomic scale characterization of defects and interfaces; physical and chemical vapor deposition of thin films; pulsed laser deposition; Laser-MBE; atomic-resolution electron microscopy; electrical and optical properties; modeling of thin film growth and defects and interfaces; novel approaches to thin film epitaxy; semiconductor thin film heterostructures and solid-state devices; and nanostructured materials

Guest Editor
Dr. C. Lewis Reynolds Jr.
Department of Materials Science and Engineering, EB I, Room 3002C, North Carolina State University, 911 Partners Way, Raleigh, NC 27695-7907, USA
Website: http://www.mse.ncsu.edu/profile/clreynol
E-Mail: lew_reynolds@ncsu.edu
Phone: +1 919 515 7622
Interests: compound semiconductor materials and devices; electrical and optical properties; thin film epitaxial growth of group III-nitrides and group II-oxides; heteroepitaxy; strain relaxation in misfit systems; defects and interfaces; quantum well structures; electronic and photonic devices; nanostructured materials

Special Issue Information

Dear Colleagues,

This special issue on Compound Semiconductor Materials will focus on thin film heterostructures of III-Vs, III-nitrides, II-oxides and perovskite-based materials across the misfit scale. Strain relaxation in large misfit systems involves both dislocation nucleation and propagation, which are more difficult in the nitride and oxide materials systems. Special emphasis will be placed on management of stresses and strains, defects and interfaces, and interactions of defects and chemistry at the nanoscale to create device-worthy materials. The volume will address the details of synthesis and processing, nanoscale characterization, novel electronic, photonic and magnetic properties, structure-property correlations, modeling and solid-state devices. It will include both layered and self-assembled nanostructures in the form of nanodots, rods and tubes. It is anticipated that the growth of novel thin film heterostructures with minimal defects will enable the next generation device structures, integration of multiple functionalities on a wafer for nanophotonics and nanoelectronics, and smart structures and sensors.

Prof. Jagdish (Jay) Narayan
Dr. C. Lew Reynolds
Guest Editors

Keywords

  • III-V materials
  • III-nitrides
  • II-oxides
  • thin film epitaxy
  • heteroepitaxy
  • misfit scale
  • nanostructures
  • integration on Si
  • solar cells
  • electronic devices
  • photonic devices

Published Papers (9 papers)

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Displaying article 1-9
p. 3309-3360
by , , ,  and
Materials 2013, 6(8), 3309-3360; doi:10.3390/ma6083309
Received: 27 June 2013; Accepted: 30 July 2013 / Published: 6 August 2013
Show/Hide Abstract | Cited by 2 | PDF Full-text (3553 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 612-625
by , , , ,  and
Materials 2013, 6(2), 612-625; doi:10.3390/ma6020612
Received: 4 December 2012; in revised form: 30 January 2013 / Accepted: 31 January 2013 / Published: 21 February 2013
Show/Hide Abstract | PDF Full-text (961 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 279-290
by  and
Materials 2013, 6(1), 279-290; doi:10.3390/ma6010279
Received: 10 December 2012; in revised form: 10 January 2013 / Accepted: 15 January 2013 / Published: 21 January 2013
Show/Hide Abstract | Cited by 2 | PDF Full-text (231 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 2817-2832
by , , ,  and
Materials 2012, 5(12), 2817-2832; doi:10.3390/ma5122817
Received: 29 October 2012; in revised form: 28 November 2012 / Accepted: 6 December 2012 / Published: 13 December 2012
Show/Hide Abstract | Cited by 9 | PDF Full-text (1563 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
abstract graphic
p. 2597-2608
by , , ,  and
Materials 2012, 5(12), 2597-2608; doi:10.3390/ma5122597
Received: 8 November 2012; in revised form: 23 November 2012 / Accepted: 23 November 2012 / Published: 4 December 2012
Show/Hide Abstract | Cited by 1 | PDF Full-text (1632 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 2498-2520
by , , , , ,  and
Materials 2012, 5(12), 2498-2520; doi:10.3390/ma5122498
Received: 24 October 2012; in revised form: 23 November 2012 / Accepted: 23 November 2012 / Published: 27 November 2012
Show/Hide Abstract | Cited by 2 | PDF Full-text (806 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 2486-2497
by , , ,  and
Materials 2012, 5(12), 2486-2497; doi:10.3390/ma5122486
Received: 16 July 2012; in revised form: 20 August 2012 / Accepted: 21 November 2012 / Published: 26 November 2012
Show/Hide Abstract | Cited by 1 | PDF Full-text (441 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 2270-2279
by , , ,  and
Materials 2012, 5(11), 2270-2279; doi:10.3390/ma5112270
Received: 14 September 2012; in revised form: 4 November 2012 / Accepted: 6 November 2012 / Published: 9 November 2012
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(This article belongs to the Special Issue Compound Semiconductor Materials)
p. 2088-2100
by ,  and
Materials 2012, 5(11), 2088-2100; doi:10.3390/ma5112088
Received: 9 August 2012; in revised form: 15 October 2012 / Accepted: 23 October 2012 / Published: 29 October 2012
Show/Hide Abstract | Cited by 4 | PDF Full-text (748 KB)
(This article belongs to the Special Issue Compound Semiconductor Materials)
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Last update: 27 February 2014

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