Materials 2012, 5(11), 2270-2279; doi:10.3390/ma5112270

Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

1,2email, 3email, 1email, 3email and 4,* email
Received: 14 September 2012; in revised form: 4 November 2012 / Accepted: 6 November 2012 / Published: 9 November 2012
(This article belongs to the Special Issue Compound Semiconductor Materials)
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Abstract: We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.
Keywords: graphene; silicon carbide; insulator; buffer layer; hot-mesh CVD
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MDPI and ACS Style

Astuti, B.; Tanikawa, M.; Rahman, S.F.A.; Yasui, K.; Hashim, A.M. Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures. Materials 2012, 5, 2270-2279.

AMA Style

Astuti B, Tanikawa M, Rahman SFA, Yasui K, Hashim AM. Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures. Materials. 2012; 5(11):2270-2279.

Chicago/Turabian Style

Astuti, Budi; Tanikawa, Masahiro; Rahman, Shaharin F.A.; Yasui, Kanji; Hashim, Abdul M. 2012. "Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures." Materials 5, no. 11: 2270-2279.

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