Materials 2012, 5(11), 2270-2279; doi:10.3390/ma5112270

Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

1 Ibnu Sina Institute for Fundamental Science Studies, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia 2 Department of Physics, Faculty of Mathematics and Nature Science, Semarang State University, Semarang, Jawa Tengah 50229, Indonesia 3 Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 9402136, Japan 4 Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, Malaysia
* Author to whom correspondence should be addressed.
Received: 14 September 2012; in revised form: 4 November 2012 / Accepted: 6 November 2012 / Published: 9 November 2012
(This article belongs to the Special Issue Compound Semiconductor Materials)
PDF Full-text Download PDF Full-Text [523 KB, uploaded 9 November 2012 09:30 CET]
Abstract: We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.
Keywords: graphene; silicon carbide; insulator; buffer layer; hot-mesh CVD

Article Statistics

Load and display the download statistics.

Citations to this Article

Cite This Article

MDPI and ACS Style

Astuti, B.; Tanikawa, M.; Rahman, S.F.A.; Yasui, K.; Hashim, A.M. Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures. Materials 2012, 5, 2270-2279.

AMA Style

Astuti B, Tanikawa M, Rahman SFA, Yasui K, Hashim AM. Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures. Materials. 2012; 5(11):2270-2279.

Chicago/Turabian Style

Astuti, Budi; Tanikawa, Masahiro; Rahman, Shaharin F.A.; Yasui, Kanji; Hashim, Abdul M. 2012. "Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures." Materials 5, no. 11: 2270-2279.

Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert