Next Article in Journal
Previous Article in Journal
Previous Article in Special Issue
Materials 2013, 6(8), 3309-3360; doi:10.3390/ma6083309
Review

Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach

1,* , 2
, 2
, 3
 and 4
Received: 27 June 2013; Accepted: 30 July 2013 / Published: 6 August 2013
(This article belongs to the Special Issue Compound Semiconductor Materials)
Download PDF [3553 KB, updated 7 August 2013; original version uploaded 6 August 2013]
Abstract: We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate the influence of growth conditions, such as partial pressure and temperature, on the surface stability and growth kinetics. First, we examine the feasibility of this approach by comparing calculated surface phase diagrams of GaAs(001) with experimental results. In addition, the Ga diffusion length on GaAs(001) during molecular beam epitaxy is discussed. Next, this approach is systematically applied to the reconstruction, adsorption and incorporation on various nitride semiconductor surfaces. The calculated results for nitride semiconductor surface reconstructions with polar, nonpolar, and semipolar orientations suggest that adlayer reconstructions generally appear on the polar and the semipolar surfaces. However, the stable ideal surface without adsorption is found on the nonpolar surfaces because the ideal surface satisfies the electron counting rule. Finally, the stability of hydrogen and the incorporation mechanisms of Mg and C during metalorganic vapor phase epitaxy are discussed.
Keywords: ab initio calculation; compound semiconductor; surface phase diagram ab initio calculation; compound semiconductor; surface phase diagram
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Kangawa, Y.; Akiyama, T.; Ito, T.; Shiraishi, K.; Nakayama, T. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach. Materials 2013, 6, 3309-3360.

AMA Style

Kangawa Y, Akiyama T, Ito T, Shiraishi K, Nakayama T. Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach. Materials. 2013; 6(8):3309-3360.

Chicago/Turabian Style

Kangawa, Yoshihiro; Akiyama, Toru; Ito, Tomonori; Shiraishi, Kenji; Nakayama, Takashi. 2013. "Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach." Materials 6, no. 8: 3309-3360.


Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert