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Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures
AbstractCu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.
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Gaubas, E.; Brytavskyi, I.; Ceponis, T.; Kalendra, V.; Tekorius, A. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures. Materials 2012, 5, 2597-2608.View more citation formats
Gaubas E, Brytavskyi I, Ceponis T, Kalendra V, Tekorius A. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures. Materials. 2012; 5(12):2597-2608.Chicago/Turabian Style
Gaubas, Eugenijus; Brytavskyi, Ievgen; Ceponis, Tomas; Kalendra, Vidmantas; Tekorius, Audrius. 2012. "Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures." Materials 5, no. 12: 2597-2608.
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