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Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures
Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, Vilnius 10222, Lithuania
Odessa I.I. Mechnikov National University, Dvoryanskaya str. 2, Odessa 65082, Ukraine
* Author to whom correspondence should be addressed.
Received: 8 November 2012; in revised form: 23 November 2012 / Accepted: 23 November 2012 / Published: 4 December 2012
Abstract: Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.
Keywords: Cu2S-CdS heterojunctions; CdS polycrystalline layers; carrier traps; optical injection DLTS; photo-ionization spectroscopy
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Gaubas, E.; Brytavskyi, I.; Ceponis, T.; Kalendra, V.; Tekorius, A. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures. Materials 2012, 5, 2597-2608.
Gaubas E, Brytavskyi I, Ceponis T, Kalendra V, Tekorius A. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures. Materials. 2012; 5(12):2597-2608.
Gaubas, Eugenijus; Brytavskyi, Ievgen; Ceponis, Tomas; Kalendra, Vidmantas; Tekorius, Audrius. 2012. "Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures." Materials 5, no. 12: 2597-2608.