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10 pages, 1951 KiB

Open AccessArticle

Influence of the Metal–Semiconductor Interface Model on Power Conservation Principle in a Simulation of Bipolar Devices

by Janusz Wozny, Zbigniew Lisik and Jacek Podgorski

Electronics 2021, 10(24), 3120; https://doi.org/10.3390/electronics10243120 - 15 Dec 2021

Viewed by 1806

Abstract

The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys. We focus on the drift-diffusion model that is still widely [...] Read more.

The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys. We focus on the drift-diffusion model that is still widely used for power device simulations. We show that without a properly designed contact(metal)–semiconductor interface, the energy conservation is not obeyed when bipolar devices are considered. This should not be accepted for power semiconductor structures, where thermal design issues are the most important. The correct model of the interface is achieved by proper doping and mesh of the contact-semiconductor region or by applying a dedicated model. The discussion is illustrated by simulation results obtained for the GaN p–n structure; additionally, Si and SiC structures are also presented. The results are also supported by a theoretical analysis of interface physics. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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19 pages, 3605 KiB

Open AccessArticle

In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

by Alessandro Soldati, Matteo Dalboni, Roberto Menozzi and Carlo Concari

Electronics 2021, 10(22), 2745; https://doi.org/10.3390/electronics10222745 - 10 Nov 2021

Cited by 1 | Viewed by 1784

Abstract

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device [...] Read more.

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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28 pages, 11387 KiB

Open AccessArticle

Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology

by Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Lorenzo Codecasa and Peter J. Zampardi

Electronics 2021, 10(6), 757; https://doi.org/10.3390/electronics10060757 - 23 Mar 2021

Cited by 17 | Viewed by 3700

Abstract

In this paper, the dc electrothermal behavior of InGaP/GaAs HBT test devices and arrays for power amplifier output stages is extensively analyzed through an efficient simulation approach. The approach relies on a full circuit representation of the domains, which accounts for electrothermal effects [...] Read more.

In this paper, the dc electrothermal behavior of InGaP/GaAs HBT test devices and arrays for power amplifier output stages is extensively analyzed through an efficient simulation approach. The approach relies on a full circuit representation of the domains, which accounts for electrothermal effects through the thermal equivalent of the Ohm’s law and can be solved in any commercial circuit simulator. In particular, the power-temperature feedback is described through an equivalent thermal network automatically obtained by (i) generating a realistic 3-D geometry/mesh of the domain in the environment of a numerical tool with the aid of an in-house routine; (ii) feeding the geometry/mesh to FANTASTIC, which extracts the network without performing simulations. Nonlinear thermal effects adversely affecting the behavior of devices/arrays at high temperatures are included through a calibrated Kirchhoff’s transformation. For the test devices, the thermally-induced distortion in I–V curves is explained, and the limits of the safe operating regions are identified for a wide range of bias conditions. A deep insight into the electrothermal behavior of the arrays is then provided, with particular emphasis on the detrimental nonuniform operation. Useful guidelines are offered to designers in terms of layout and choice of the ballasting strategy. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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21 pages, 5252 KiB

Open AccessArticle

Influence of Selected Factors on Thermal Parameters of the Components of Forced Cooling Systems of Electronic Devices

by Krzysztof Posobkiewicz and Krzysztof Górecki

Electronics 2021, 10(3), 340; https://doi.org/10.3390/electronics10030340 - 1 Feb 2021

Cited by 13 | Viewed by 2431

Abstract

The paper presents some investigation results on the properties of forced cooling systems dedicated to electronic devices. Different structures of such systems, including Peltier modules, heat sinks, fans, and thermal interfaces, are considered. Compact thermal models of such systems are formulated. These models [...] Read more.

The paper presents some investigation results on the properties of forced cooling systems dedicated to electronic devices. Different structures of such systems, including Peltier modules, heat sinks, fans, and thermal interfaces, are considered. Compact thermal models of such systems are formulated. These models take into account a multipath heat transfer and make it possible to compute waveforms of the device’s internal temperature at selected values of the power dissipated in the device. The analytical formulas describing the dependences of the thermal resistance of electronic devices co-operating with the considered cooling systems on the power dissipated in the cooled electronic device and the power feeding the Peltier module and the speed of airflow caused by a fan are proposed. The correctness of the proposed models is verified experimentally in a wide range of powers dissipated in electronic devices operating in different configurations of the used cooling system. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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17 pages, 4565 KiB

Open AccessArticle

Thermal, Photometric and Radiometric Properties of Multi-Color LEDs Situated on the Common PCB

by Krzysztof Górecki and Przemysław Ptak

Electronics 2020, 9(10), 1672; https://doi.org/10.3390/electronics9101672 - 13 Oct 2020

Cited by 9 | Viewed by 1879

Abstract

This paper presents the results of experimental investigations illustrating the influence of the spectra of the light emitted by power LEDs on their thermal, photometric and radiometric parameters. The investigations were performed for six diodes emitting white or monochromatic light of different spectra. [...] Read more.

This paper presents the results of experimental investigations illustrating the influence of the spectra of the light emitted by power LEDs on their thermal, photometric and radiometric parameters. The investigations were performed for six diodes emitting white or monochromatic light of different spectra. Each of these diodes was produced by the same manufacturer, mounted in the same package and the tested devices were soldered to the common PCB. In the paper, the manner and set-ups making possible measurements of self and transfer transient thermal impedances, illuminance and the surface power density of the light emitted by the tested devices are described. Selected results of measurements are shown and discussed. These results prove that the spectra of the emitted light influence self-transient thermal impedances of the considered devices and transfer transient thermal impedances between some pairs of these devices. Additionally, it is proved that thermal couplings between the tested diodes strongly influence their junction temperature and the surface power density of the emitted radiation. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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11 pages, 528 KiB

Open AccessArticle

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation

by Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese and Thomas Zimmer

Electronics 2020, 9(9), 1365; https://doi.org/10.3390/electronics9091365 - 23 Aug 2020

Cited by 3 | Viewed by 2857

Abstract

In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent [...] Read more.

In this paper, we extend the model developed in part-I of this work to include the effects of the back-end-of-line (BEOL) metal layers and test its validity against on-wafer measurement results of SiGe heterojunction bipolar transistors (HBTs). First we modify the position dependent substrate temperature model of part-I by introducing a parameter to account for the upward heat flow through BEOL. Accordingly the coupling coefficient models for bipolar transistors with and without trench isolations are updated. The resulting modeling approach takes as inputs the dimensions of emitter fingers, shallow and deep trench isolation, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are first validated against 3D TCAD simulations including the effect of BEOL followed by validation against measured data obtained from state-of-art multifinger SiGe HBTs of different emitter geometries. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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13 pages, 587 KiB

Open AccessArticle

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

by Aakashdeep Gupta, K Nidhin, Suresh Balanethiram, Shon Yadav, Anjan Chakravorty, Sebastien Fregonese and Thomas Zimmer

Electronics 2020, 9(9), 1333; https://doi.org/10.3390/electronics9091333 - 19 Aug 2020

Cited by 4 | Viewed by 2542

Abstract

In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having [...] Read more.

In this part, we propose a step-by-step strategy to model the static thermal coupling factors between the fingers in a silicon based multifinger bipolar transistor structure. First we provide a physics-based formulation to find out the coupling factors in a multifinger structure having no-trench isolation (

c_{i j, n t}

). As a second step, using the value of

c_{i j, n t}

, we propose a formulation to estimate the coupling factor in a multifinger structure having only shallow trench isolations (

c_{i j, s t}

). Finally, the coupling factor model for a deep and shallow trench isolated multifinger device (

c_{i j, d t}

) is presented. The proposed modeling technique takes as inputs the dimensions of emitter fingers, shallow and deep trench isolations, their relative locations and the temperature dependent material thermal conductivity. Coupling coefficients obtained from the model are validated against 3D TCAD simulations of multifinger bipolar transistors with and without trench isolations. Geometry scalability of the model is also demonstrated. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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Review

Jump to: Research

28 pages, 1483 KiB

Open AccessReview

A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches

by Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi and Lorenzo Codecasa

Electronics 2023, 12(16), 3471; https://doi.org/10.3390/electronics12163471 - 16 Aug 2023

Cited by 2 | Viewed by 851

Abstract

This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the base-emitter [...] Read more.

This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the base-emitter voltage and the junction temperature. The theory behind the techniques is described with a unified and comprehensible nomenclature. Advantages, underlying approximations, and limitations of the methods are illustrated. The accuracy is assessed by emulating the DC measurements with PSPICE electrothermal simulations of a transistor model, applying the techniques to the simulated currents/voltages, and comparing the extracted thermal resistance data with the values obtained from the target formulation embedded in the transistor model. An InGaP/GaAs HBT and an Si/SiGe HBT for high-frequency applications are considered as case-studies. Full article

(This article belongs to the Special Issue Electrothermal Effects in Semiconductor Devices/Circuits)

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