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Nanomaterials
Special Issues
Nanoelectronics: Concepts, Theory and Modeling
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Nanoelectronics: Concepts, Theory and Modeling

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: closed (17 July 2020) | Viewed by 6035

Special Issue Editor

Dr. Hatef Sadeghi

E-Mail Website
Guest Editor
School of Engineering, University of Warwick, Coventry CV4 7AL, UK
Interests: theory of electron, phonon, and spin transport in nanoscale quantum devices; quantum and phonon interference; thermoelectricity; piezoelectricity; molecular sensing; spintronic and optoelectronics in single molecules; self-assembled monolayers; two dimensional materials; van der Waals heterostructures and nanoribbons
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Nano-scale materials are attractive for a new generation of devices due to their unique electronic, optical, vibrtional, and chemical properties. Advances in experimental techniques over the past decade have made it possible to probe transport properties down to a few nanometer scales. To design new nanoscale devices and explain new experimental observations, it is essential to make progress in the development of the theory and modeling of electron, phonon, and spin transport through these devices.

In this Special Issue, we would like to invite you to submit an original research paper or review paper on concepts, theory, and modeling of nanoscale materials including analytical and computational modeling of nanoscale materials and junctions, single molecule electronics, quantum coherence and entanglement, interaction effects in nanoscale transport, spintronics, nanoscale energy harvesting using thermoelectricity and piezoelectricity, quantum and phonon interference effects, hybrid graphene nanostructures, and van-der Waals heterostructures and nanoribbons.

Dr. Hatef Sadeghi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum, phonon, and spin transport
  • environmental and dephasing effects
  • quantum interference
  • thermoelectricity
  • biological sensing
  • spintronic
  • optoelectronics
  • nanoelectronic building blocks
  • piezoelectricty
  • two dimensional materials
  • van-der Waals heterostructures
  • graphene nanoribbons
  • single molecule electronics
  • self-assembled monolayers
  • scattering theory
  • Density Functional Theory
  • molecular dynamics

Published Papers (2 papers)

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Research

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7 pages, 1248 KiB  
Communication
Switching Quantum Interference in Phenoxyquinone Single Molecule Junction with Light
by Abdalghani Daaoub, Sara Sangtarash and Hatef Sadeghi
Nanomaterials 2020, 10(8), 1544; https://doi.org/10.3390/nano10081544 - 06 Aug 2020
Cited by 4 | Viewed by 2794
Abstract
Quantum interference (QI) can lead to large variations in single molecule conductance. However, controlling QI using external stimuli is challenging. The molecular structure of phenoxyquinone can be tuned reversibly using light stimulus. In this paper, we show that this can be utilized to [...] Read more.
Quantum interference (QI) can lead to large variations in single molecule conductance. However, controlling QI using external stimuli is challenging. The molecular structure of phenoxyquinone can be tuned reversibly using light stimulus. In this paper, we show that this can be utilized to control QI in phenoxyquinone derivatives. Our calculations indicate that, as a result of such variation in molecular structure of phenoxyquinone, a crossover from destructive to constructive QI is induced. This leads to a significant variation in the single molecule conductance by a couple of orders of magnitude. This control of QI using light is a new paradigm in photosensitive single molecule switches and opens new avenues for future QI-based photoswitches. Full article
(This article belongs to the Special Issue Nanoelectronics: Concepts, Theory and Modeling)
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Other

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7 pages, 2216 KiB  
Letter
Palladium (III) Fluoride Bulk and PdF3/Ga2O3/PdF3 Magnetic Tunnel Junction: Multiple Spin-Gapless Semiconducting, Perfect Spin Filtering, and High Tunnel Magnetoresistance
by Zongbin Chen, Tingzhou Li, Tie Yang, Heju Xu, Rabah Khenata, Yongchun Gao and Xiaotian Wang
Nanomaterials 2019, 9(9), 1342; https://doi.org/10.3390/nano9091342 - 19 Sep 2019
Cited by 6 | Viewed by 2690
Abstract
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF [...] Read more.
Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized R 3 − c -type bulk PdF3 compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF3/Ga2O3/PdF3 magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 107). Full article
(This article belongs to the Special Issue Nanoelectronics: Concepts, Theory and Modeling)
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