GaN-Based Power Electronic Devices and Their Applications, 2nd Edition

Dear Colleagues,

Due to their excellent physical properties, gallium nitride (GaN) electric devices that can operate at a high switching frequency can drastically improve the energy conversion efficiency, reduce the volume of energy storage components, and scale down the system form factor. GaN has become one of the most promising materials in the area of high-power and high-temperature power electronics, and it is considered the material that will revolutionize the future of power electronics.

Impressive progress has already been achieved in lateral and vertical GaN device technologies, from advanced epitaxial growth approaches to novel or cost-effective device structures as well as innovative processing methods, more in-depth device physical analysis, and monolithic integration of GaN-based power electronic devices.

The main aim of this Special Issue is to bring the latest and most important innovations in GaN-based power electronic devices and their applications, address recent breakthroughs in GaN power electronics, and provide an up-to-date picture of current challenges and future development.

The topics covered in this Special Issue include but are not limited to simulation and modelling, device and integration design, epitaxy, processing technology, reliability and failure analysis, advanced characterizations, and applications.

Dr. Kai Fu
Dr. Houqiang Fu
Guest Editors

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• simulation and modelling of GaN power electronics
• epitaxial growth for GaN power devices
• lateral and vertical GaN power devices
• processing technology for GaN power electronics
• reliability and failure analysis of GaN power electronics
• advanced characterizations for GaN power electronics
• GaN power IC technology
• power electronic applications based on GaN devices

• GaN-Based Power Electronic Devices and Their Applications in Electronics (9 articles)