Special Issue "Semiconducting Polymer for Organic Transistors"

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials".

Deadline for manuscript submissions: closed (30 June 2018)

Special Issue Information

Dear Colleagues:

This Special Issue focuses on semiconducting polymers for organic transistors that have potential applications in a variety of integrated circuits, such as digital logic circuits and analog circuits. These can be fabricated on flexible substrates at low temperatures by printing or solution-coating patterning methods, enabling thin, flexible, and large areas electronics as well as low cost electronics. In particular, fully-printed organic transistors on thin plastic film substrates are an attractive manufacturing option. Control of molecular orientation in the printed films is also major issue because it significantly influences organic transistor electrical characteristics. Contributions are widely invited on newly developed materials, semiconductor layer morphology, printing processes, charge injection and charge transport mechanisms, integrated circuits, backplanes for flexible LCD and OLED displays, RFID tags, sensors, and new potential applications.

Prof. Dr. Shizuo Tokito
Guest Editor

Manuscript Submission Information

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Keywords

  • Semiconducting Polymers

  • Organic Semiconductor

  • Conjugated Polymers

  • Charge Transport

  • Charge Injection

  • Charge Mobility

  • Thin-film Transistor

  • Printed Electronics

  • Flexible Electronics

  • Flexible Displays

Published Papers (4 papers)

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Research

Open AccessArticle Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy
Appl. Sci. 2018, 8(9), 1493; https://doi.org/10.3390/app8091493
Received: 3 August 2018 / Revised: 20 August 2018 / Accepted: 21 August 2018 / Published: 29 August 2018
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Abstract
Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy
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Information on localized states at the interfaces of solution-processed organic semiconductors and polymer gate insulators is critical to the development of printable organic field-effect transistors (OFETs) with good electrical performance. This paper reports on the use of impedance spectroscopy to determine the energy distribution of the density of interface states in organic metal-insulator-semiconductor (MIS) capacitors based on poly(3-hexylthiophene) (P3HT) with three different polymer gate insulators, including polyimide, poly(4-vinylphenol), and poly(methylsilsesquioxane). The findings of the study indicate that the impedance characteristics of the P3HT MIS capacitors are strongly affected by patterning and thermal annealing of the organic semiconductor films. To extract the interface-state distributions from the conductance of the P3HT MIS capacitors, an equivalent circuit model with continuum trap states is used, which also takes the band-bending fluctuations into consideration. In addition, the relationship between the determined interface states and the electrical characteristics of P3HT-based OFETs is investigated. Full article
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
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Open AccessFeature PaperArticle Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors
Appl. Sci. 2018, 8(8), 1341; https://doi.org/10.3390/app8081341
Received: 13 July 2018 / Revised: 2 August 2018 / Accepted: 8 August 2018 / Published: 10 August 2018
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Abstract
Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been
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Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices. Full article
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
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Open AccessFeature PaperArticle Printed Organic Complementary Inverter with Single SAM Process Using a p-type D-A Polymer Semiconductor
Appl. Sci. 2018, 8(8), 1331; https://doi.org/10.3390/app8081331
Received: 10 July 2018 / Revised: 28 July 2018 / Accepted: 7 August 2018 / Published: 9 August 2018
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Abstract
The demonstration of the complementary integrated circuit using printing processes is indispensable for realizing electronic devices using organic thin film transistors. Although complementary integrated circuits have advantages such as low power consumption and a wide output voltage range, complementary integrated circuits fabricated by
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The demonstration of the complementary integrated circuit using printing processes is indispensable for realizing electronic devices using organic thin film transistors. Although complementary integrated circuits have advantages such as low power consumption and a wide output voltage range, complementary integrated circuits fabricated by the printing method have problems regarding driving voltage and performance. Studies on fabrication processes of electronic circuits for printing technology, including optimization and simplification, are also important research topics. In this study, the fabrication process of the printed complementary integrated circuit was simplified by applying a p-type donor-acceptor (D-A) polymer semiconductor, which is not strongly affected by the electrode work function. An inverter circuit and the ring oscillator circuit were demonstrated using this process. The fabricated ring oscillator array showed excellent performance, with low voltage operation and low performance variation. Full article
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
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Graphical abstract

Open AccessArticle Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors
Appl. Sci. 2018, 8(8), 1274; https://doi.org/10.3390/app8081274
Received: 29 June 2018 / Revised: 17 July 2018 / Accepted: 26 July 2018 / Published: 1 August 2018
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Abstract
This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high
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This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high built-in electric field perpendicular to the SiO2 gate insulator surface, which results in a threshold voltage shift and enhanced hole injection compared to the treatment of phenethyltrichlorosilane (PETS) with small dipoles. Pronounced parabolic drain current‒voltage (IDVD) characteristics due to a space-charge limited current are observed in short-channel OFETs based on poly(3-hexylthiophene) with CPTS-treated gate insulators. CPTS treatment on short-channel OFETs based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) suppresses the nonlinear ID increase in the low VD region caused by the voltage drop at the Au/F8T2 contact. The influence of the increase in the net source-drain electric field associated with the reduced voltage drops on the channel-length dependence of the field-effect mobility of short-channel F8T2 FETs is also discussed. Full article
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
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