Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.5
2.7
Journals
Applied Sciences
Special Issues
Oxide Thin Film Transistors
share announcement

Oxide Thin Film Transistors

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (30 April 2019) | Viewed by 6140

Special Issue Editor

Prof. Dr. Hyun Jae Kim

E-Mail Website
Guest Editor
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
Interests: oxide thin-film transistors; solution process; advanced memory; biosensors; phototransistors; CMOS image sensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Thin-film transistors (TFTs) have been in extensive use as on/off switches and current-driving devices for various applications since the concept of TFTs was first reported. TFTs are considered one of the most important devices that controls each pixel in active-matrix flat panel displays (AMFPD). TFTs are widely used, not only in liquid crystals (LCs), but also in organic light-emitting diode (OLED) displays, from mobile displays to wide-sized displays. In particular, oxide TFTs have gained significant attention due to their superior performance compared to conventional amorphous Si (a–Si) TFTs, with high mobility, low off-current, and high transparency. Furthermore, oxide TFTs are very attractive for various sensor applications (bio, photo, gas, pressure, etc.) due to their merits, including high sensitivity and compatibility for large-area deposition. This Special Issue of the Applied Sciences, "Oxide Thin-Film Transistors", will cover recent advances in oxide TFT technology. The main topics are as follows: 1) device performance and stability, covering research into improving device performance and stability through material engineering, structural engineering, and post-/pre-treatment engineering of oxide TFTs. 2) Flexible and wearable oxide TFTs. This research deals with wavy, stiff, and neutralizing structures that can improve mechanical stability. 3) Various oxide TFT-based sensors and memory devices. This research includes advanced structures and materials that react to external energy sources such as light, bias, atmosphere, etc. 4) Various oxide materials. This research includes oxide materials such as hafnium oxide (HfOx), zirconium oxide (ZrOx), indium-zinc-oxide (IZO), indium-gallium-zinc-oxide (IGZO), indium-tin-zinc-oxide (ITZO), indium-tin-oxide (ITO), etc. for gate insulators, channels and electrodes.

Prof. Hyun Jae Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Thin-film transistors
  • Oxide semiconductor materials
  • Transparent electrodes
  • Solution process (sol-gel, ink jet printing, etc.)
  • Reliability (positive/negative voltage bias, light illumination, temperature, etc.)
  • Flexibility and wearability
  • Stretchability
  • Oxide-based application (biosensors, photo sensors, gas sensors, pressure sensors, and memory etc.)

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

7 pages, 1763 KiB  
Article
Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs
by Xiaoming Huang, Dong Zhou and Weizong Xu
Appl. Sci. 2019, 9(9), 1880; https://doi.org/10.3390/app9091880 - 8 May 2019
Cited by 4 | Viewed by 3235
Abstract
The electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) deposited with different N2/O2 partial pressure ratios (PN/O) are investigated. It is found that the device with 20% PN/O exhibits enhanced electrical stability after positive-bias-stress temperature [...] Read more.
The electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) deposited with different N2/O2 partial pressure ratios (PN/O) are investigated. It is found that the device with 20% PN/O exhibits enhanced electrical stability after positive-bias-stress temperature (PBST) and negative-bias-stress illumination (NBSI), presenting decreased threshold voltage drift (ΔVth). Compared to the N-free TFT, the average effective interface barrier energy (Eτ) of the TFT with 20% PN/O is increased from 0.37 eV to 0.57 eV during the bias-stress process, which agrees with the suppressed ΔVth from 3.0 V to 1.12 V after the PBS at T = 70 °C. X-ray photoelectron spectroscopy analysis revealed that the enhanced stability of the a-IGZO TFT with 20% PN/O should be ascribed to the control of oxygen vacancy defects at the interfacial region. Full article
(This article belongs to the Special Issue Oxide Thin Film Transistors)
►▼ Show Figures

Figure 1

7 pages, 4474 KiB  
Article
All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors
by Jianqiu Chen, Xiuqi Huang, Qunjie Li, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Hongfu Liang, Yicong Zhou, Rihui Yao and Junbiao Peng
Appl. Sci. 2019, 9(1), 83; https://doi.org/10.3390/app9010083 - 26 Dec 2018
Cited by 3 | Viewed by 2617
Abstract
In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C [...] Read more.
In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays. Full article
(This article belongs to the Special Issue Oxide Thin Film Transistors)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop