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J. Low Power Electron. Appl. 2014, 4(2), 110-118; doi:10.3390/jlpea4020110

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

* ,
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
The original of this paper had been presented in IEEE S3S Conference 2013.
* Author to whom correspondence should be addressed.
Received: 28 February 2014 / Revised: 7 May 2014 / Accepted: 16 May 2014 / Published: 23 May 2014
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2013)
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A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).
Keywords: FinFET; SOI; threshold FinFET; SOI; threshold
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Endo, K.; Migita, S.; Ishikawa, Y.; Matsukawa, T.; O'uchi, S.-I.; Tsukada, J.; Mizubayashi, W.; Morita, Y.; Ota, H.; Yamauchi, H.; Masahara, M. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. J. Low Power Electron. Appl. 2014, 4, 110-118.

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J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert