Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs†
AbstractA threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).
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Endo, K.; Migita, S.; Ishikawa, Y.; Matsukawa, T.; O'uchi, S.-I.; Tsukada, J.; Mizubayashi, W.; Morita, Y.; Ota, H.; Yamauchi, H.; Masahara, M. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. J. Low Power Electron. Appl. 2014, 4, 110-118.
Endo K, Migita S, Ishikawa Y, Matsukawa T, O'uchi S-I, Tsukada J, Mizubayashi W, Morita Y, Ota H, Yamauchi H, Masahara M. Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs. Journal of Low Power Electronics and Applications. 2014; 4(2):110-118.Chicago/Turabian Style
Endo, Kazuhiko; Migita, Shinji; Ishikawa, Yuki; Matsukawa, Takashi; O'uchi, Shin-ichi; Tsukada, Junji; Mizubayashi, Wataru; Morita, Yukinori; Ota, Hiroyuki; Yamauchi, Hitomi; Masahara, Meishoku. 2014. "Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs." J. Low Power Electron. Appl. 4, no. 2: 110-118.