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Advances in Nanomaterials for Optoelectronics
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Advances in Nanomaterials for Optoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 May 2023) | Viewed by 14637

Special Issue Editors

Prof. Dr. Shengzhong Liu

grade E-Mail Website
Guest Editor
1. Institute for Advanced Energy Materials/School of Materials Science & Engineering, Shaanxi Normal University, Xi'an 710119, China
2. Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Interests: perovskite; solar cells
Special Issues, Collections and Topics in MDPI journals
Dr. Adel Najar

E-Mail Website
Guest Editor
Department of Physics, College of Science, UAE University, Al Ain PO Box 15551, United Arab Emirates
Interests: nanomaterials; solar cells; photonic and optoelectronic devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue will include interdisciplinary topics at the frontiers of nanomaterials and devices, covering a wide range of applications in optoelectronics, including solar cells, photodetectors, lasers, transistors, light-emitting diodes (LEDs), sensors, etc. Publications will be devoted to research on nanomaterials and nanocomposites (perovskites, 2D-layered materials, 3D-structured nanomaterials, etc.), device fabrications, advanced nanomaterials, optoelectronic properties, and the investigation of theoretical (and modeling of) structure-property relationships. Other topics not mentioned in the list of specified topics are also welcome if they are related to the theme of the Special Issue.

The main goal of this research topic is to provide a specialized platform for researchers working in this field, where they can share new results, challenges, and perspectives of the new advances in nanomaterials and their optoelectronic applications and present a roadmap of this field.

Prof. Dr. Shengzhong Liu
Dr. Adel Najar
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterial
  • perovskite
  • 2D
  • solar cell
  • photodetector
  • laser
  • transistor
  • LED
  • sensor

Related Special Issue

Published Papers (7 papers)

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Research

12 pages, 3941 KiB  
Article
Design and Fabrication of an Ag Ultrathin Layer-Based Transparent Band Tunable Conductor and Its Thermal Stability
by Er-Tao Hu, Hongzhi Zhao, Min Wang, Jing Wang, Qing-Yuan Cai, Kehan Yu and Wei Wei
Nanomaterials 2023, 13(14), 2108; https://doi.org/10.3390/nano13142108 - 19 Jul 2023
Viewed by 918
Abstract
Transparent conductors (TC) have been widely applied in a wide range of optoelectronic devices. Nevertheless, different transparent spectral bands are always needed for particular applications. In this work, indium tin oxide (ITO)-free TCs with tunable transparent bands based on the film structure of [...] Read more.
Transparent conductors (TC) have been widely applied in a wide range of optoelectronic devices. Nevertheless, different transparent spectral bands are always needed for particular applications. In this work, indium tin oxide (ITO)-free TCs with tunable transparent bands based on the film structure of TiO2/Ag/AZO (Al-doped ZnO) were designed by the transfer matrix method and deposited by magnetron sputtering. The transparent spectra and figure-of-merit (FOM) were effectively adjusted by precisely controlling the Ag layer’s thickness. The fabricated as-deposited samples exhibited an average optical transmittance larger than 88.3% (400–700 nm), a sheet resistance lower than 7.7 Ω.sq−1, a low surface roughness of about 1.4 nm, and mechanical stability upon 1000 bending cycles. Moreover, the samples were able to hold optical and electrical properties after annealing at 300 °C for 60 min, but failed at 400 °C even for 30 min. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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19 pages, 7155 KiB  
Article
A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations
by Najwa Al Bouzieh, Muhammad Atif Sattar, Maamar Benkraouda and Noureddine Amrane
Nanomaterials 2023, 13(14), 2084; https://doi.org/10.3390/nano13142084 - 16 Jul 2023
Cited by 2 | Viewed by 1384
Abstract
In this study, we explore the effects of Zn doping on the electronic, optical, and thermoelectric properties of α-SnSe in bulk and monolayer forms, employing density functional theory calculations. By varying the doping concentrations, we aim to understand the characteristics of Zn-doped SnSe [...] Read more.
In this study, we explore the effects of Zn doping on the electronic, optical, and thermoelectric properties of α-SnSe in bulk and monolayer forms, employing density functional theory calculations. By varying the doping concentrations, we aim to understand the characteristics of Zn-doped SnSe in both systems. Our analysis of the electronic band structure using (PBE), (SCAN), and (HSE06) functionals reveals that all doped systems exhibit semiconductor-like behavior, making them suitable for applications in optoelectronics and photovoltaics. Notably, the conduction bands in SnSe monolayers undergo changes depending on the Zn concentration. Furthermore, the optical analysis indicates a decrease in the dielectric constant when transitioning from bulk to monolayer forms, which is advantageous for capacitor production. Moreover, heavily doped SnSe monolayers hold promise for deep ultraviolet applications. Examining the thermoelectric transport properties, we observe that Zn doping enhances the electrical conductivity in bulk SnSe at temperatures below 500 K. However, the electronic thermal conductivity of monolayer samples is lower compared to bulk samples, and it decreases consistently with increasing Zn concentrations. Additionally, the Zn-doped 2D samples exhibit high Seebeck coefficients across most of the temperature ranges investigated. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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14 pages, 3764 KiB  
Article
A Voltage-Tuned Terahertz Absorber Based on MoS2/Graphene Nanoribbon Structure
by Omnia Samy, Mohamed Belmoubarik, Taiichi Otsuji and Amine El Moutaouakil
Nanomaterials 2023, 13(11), 1716; https://doi.org/10.3390/nano13111716 - 24 May 2023
Cited by 6 | Viewed by 1684
Abstract
Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we [...] Read more.
Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1–10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS2/graphene). Nanoribbons of MoS2/graphene heterostructure are laid over a SiO2 substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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20 pages, 7998 KiB  
Article
Ferromagnetism in Defected TMD (MoX2, X = S, Se) Monolayer and Its Sustainability under O2, O3, and H2O Gas Exposure: DFT Study
by Anjna Devi, Neha Dhiman, Narender Kumar, Wadha Alfalasi, Arun Kumar, P. K. Ahluwalia, Amarjeet Singh and Nacir Tit
Nanomaterials 2023, 13(10), 1642; https://doi.org/10.3390/nano13101642 - 15 May 2023
Cited by 3 | Viewed by 1660
Abstract
Spin-polarized density-functional theory (DFT) has been employed to study the effects of atmospheric gases on the electronic and magnetic properties of a defective transition-metal dichalcogenide (TMD) monolayer, MoX2 with X = S or Se. This study focuses on three single vacancies: (i) [...] Read more.
Spin-polarized density-functional theory (DFT) has been employed to study the effects of atmospheric gases on the electronic and magnetic properties of a defective transition-metal dichalcogenide (TMD) monolayer, MoX2 with X = S or Se. This study focuses on three single vacancies: (i) molybdenum “VMo”; (ii) chalcogenide “VX”; and (iii) di-chalcogenide “VX2”. Five different samples of sizes ranging from 4 × 4 to 8 × 8 primitive cells (PCs) were considered in order to assess the effect of vacancy–vacancy interaction. The results showed that all defected samples were paramagnetic semiconductors, except in the case of VMo in MoSe2, which yielded a magnetic moment of 3.99 μB that was independent of the sample size. Moreover, the samples of MoSe2 with VMo and sizes of 4 × 4 and 5 × 5 PCs exhibited half-metallicity, where the spin-up state becomes conductive and is predominantly composed of dxy and dz2 orbital mixing attributed to Mo atoms located in the neighborhood of VMo. The requirement for the establishment of half-metallicity is confirmed to be the provision of ferromagnetic-coupling (FMC) interactions between localized magnetic moments (such as VMo). The critical distance for the existence of FMC is estimated to be dc≅ 16 Å, which allows small sample sizes in MoSe2 to exhibit half-metallicity while the FMC represents the ground state. The adsorption of atmospheric gases (H2O, O2, O3) can drastically change the electronic and magnetic properties, for instance, it can demolish the half-metallicity characteristics. Hence, the maintenance of half-metallicity requires keeping the samples isolated from the atmosphere. We benchmarked our theoretical results with the available data in the literature throughout our study. The conditions that govern the appearance/disappearance of half-metallicity are of great relevance for spintronic device applications. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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11 pages, 2860 KiB  
Article
Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties
by Chohdi Amri, Shengzhong (Frank) Liu and Adel Najar
Nanomaterials 2023, 13(10), 1602; https://doi.org/10.3390/nano13101602 - 10 May 2023
Viewed by 1047
Abstract
Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical [...] Read more.
Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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10 pages, 2384 KiB  
Article
Light-Controlled Direction of Distributed Feedback Laser Emission by Photo-Mobile Polymer Films
by Daniele Eugenio Lucchetta, Andrea Di Donato, Oriano Francescangeli, Gautam Singh and Riccardo Castagna
Nanomaterials 2022, 12(17), 2890; https://doi.org/10.3390/nano12172890 - 23 Aug 2022
Cited by 11 | Viewed by 2018
Abstract
We report on the realization of Distributed Feedback (DFB) lasing by a high-resolution reflection grating integrated in a Photomobile Polymer (PMP) film. The grating is recorded in a recently developed holographic mixture basically containing halolakanes/acrylates and a fluorescent dye molecule (Rhodamine 6G). The [...] Read more.
We report on the realization of Distributed Feedback (DFB) lasing by a high-resolution reflection grating integrated in a Photomobile Polymer (PMP) film. The grating is recorded in a recently developed holographic mixture basically containing halolakanes/acrylates and a fluorescent dye molecule (Rhodamine 6G). The PMP-mixture is placed around the grating spot and a subsequent curing/photo-polymerization process is promoted by UV-irradiation. Such a process brings to the simultaneous formation of the PMP-film and the covalent link of the PMP-film to the DFB-grating area (PMP-DFB system). The PMP-DFB allows lasing action when optically pumped with a nano-pulsed green laser source. Moreover, under a low-power light-irradiation the PMP-DFB bends inducing a spatial readdressing of the DFB-laser emission. This device is the first example of a light-controlled direction of a DFB laser emission. It could represent a novel disruptive optical technology in many fields of Science, making feasible the approach to free standing and light-controllable lasers. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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10 pages, 3338 KiB  
Article
Flexible Cu3(HHTP)2 MOF Membranes for Gas Sensing Application at Room Temperature
by Ashraf Ali, Husam H. D. AlTakroori, Yaser E. Greish, Ahmed Alzamly, Lamia A. Siddig, Naser Qamhieh and Saleh T. Mahmoud
Nanomaterials 2022, 12(6), 913; https://doi.org/10.3390/nano12060913 - 10 Mar 2022
Cited by 14 | Viewed by 5166
Abstract
Mixed matrix membranes (MMMs), possessing high porosity, have received extensive attention for gas sensing applications. However, those with high flexibility and significant sensitivity are rare. In this work, we report on the fabrication of a novel membrane, using Cu3(HHTP)2 MOF [...] Read more.
Mixed matrix membranes (MMMs), possessing high porosity, have received extensive attention for gas sensing applications. However, those with high flexibility and significant sensitivity are rare. In this work, we report on the fabrication of a novel membrane, using Cu3(HHTP)2 MOF (Cu-MOF) embedded in a polymer matrix. A solution comprising a homogenous suspension of poly-vinyl alcohol (PVA) and ionic liquid (IL), and Cu-MOF solid particles, was cast onto a petri dish to obtain a flexible membrane (215 μm in thickness). The sensor membrane (Cu-MOF/PVA/IL), characterized for its structure and morphology, was assessed for its performance in sensing against various test gases. A detection limit of 1 ppm at 23 °C (room temperature) for H2S was achieved, with a response time of 12 s. Moreover, (Cu-MOF/PVA/IL) sensor exhibited excellent repeatability, long-term stability, and selectivity towards H2S gas. The other characteristics of the (Cu-MOF/PVA/IL) sensor include high flexibility, low cost, low-power consumption, and easy fabrication technique, which nominate this sensor as a potential candidate for use in practical industrial applications. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics)
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