Latest Progress in Wide Band-Gap Semiconductors
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".
Deadline for manuscript submissions: closed (1 January 2022) | Viewed by 2431
Special Issue Editors
Interests: GaN-based wide bandgap semiconductors; 2D semiconductor materials
Interests: GaN-based wide bandgap semiconductors; semiconductor lighting
Interests: III-V Nitride; epitaxial growth; MOS/MIS interface; power devices; solar cells; photodiodes; electronic devices
Special Issues, Collections and Topics in MDPI journals
Interests: epitaxial thin film growth by MOCVD and RF sputtering; in situ/operando x-ray characterizations of III–V nitride; GaN-based heterointerface and surface dynamics; micro-LEDs
Special Issue Information
Dear Colleagues,
Semiconductor materials and devices play a major role in science and technology in modern society. In fact, semiconductor material systems have now entered a new era, driven by demands stemming from accelerating advances in science and technology, which push forward the development of wide bandgap semiconductor materials and devices toward high power, low energy consumption, multiwavelength band, ultrafast response, miniaturization, and high integration degrees. The high-tech industry in the areas of information, energy, transportation, etc., constantly needs new wide bandgap semiconductor materials and devices, and those demands become a new and strong driving force for a more rapid development of the latter. The topics covered within this Special Issue include but are not limited to the following:
- The epitaxial growth of the wide band gap semiconductors (III-nitride semiconductors, SiC, ZnO, diamond, Ga2O3, etc.) and their low-dimensional quantum structures;
- Optical and electronic properties, doping and defects, structural analysis, and defect characterization;
- Optical devices such as micro-LEDs, VCSEL, edge emitting laser diodes, UV–LEDs, UV–laser diodes, single photon emitters, photodetectors, and intersubband emitters;
- Electronic devices for high power switching, high frequency, RF applications, etc.;
- Novel materials, nanostructures, and device concepts.
Prof. Dr. Ning Tang
Prof. Dr. Bo Shen
Dr. Liwen Sang
Dr. Guangxu Ju
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
