High-Voltage Technology and Its Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".

Deadline for manuscript submissions: 31 October 2024 | Viewed by 1005

Special Issue Editor


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Guest Editor
Department of Electrical Sustainable Energy, Delft University of Technology, 2628 CD Delft, The Netherlands
Interests: high voltage; aging of insulation material; high-voltage power electronics-based test sources; diagnostics and monitoring; medium-frequency transformers; power transformers; power cables; FEM-based modeling

Special Issue Information

Dear Colleagues,

Due to the energy transition, a massive amount of power electronics (PE) will be integrated into the medium- and high-voltage (MV/HV) grid, as well as emerging applications like electric aircraft. The design of insulation systems for such high-voltage PE-based devices lacks comprehensive guidelines at present. For example, the high-frequency PWM stress with high dv/dt generated by PE devices accelerates insulation aging at higher rates compared to the traditional 50 Hz sinusoidal waveform, something which is not fully understood and characterized. Ongoing developments, such as the introduction of new SiC MOSFETs with voltage ratings exceeding 10 kV, amplify these challenges, affecting both the design of their own packaging and the insulation degradation of devices connected to such switches. The medium-frequency transformer (MFT), a key component in power converters, is an example of such devices that is subjected to these type of stresses. At MV/HV levels, the insulation system of MFT becomes a critical design consideration, necessitating proper guidelines.

As the grid becomes more dependent on power electronics devices, the diagnostics and monitoring of MV/HV power electronics components need more attention and development. Currently, temperature monitoring, as well as fast protection against short circuit currents, is implemented. That said, other diagnostics and monitoring techniques, such as PD measurement, reverse conduction current, drain-source voltage drop, etc., can also be used to predict the condition of the devices. Furthermore, while traditional power devices are being tested for under line frequency, lightning, and switching overvoltages, for MV/HV PE-based devices, fulfilling all of those requirements demands significant oversizing. As such, alternative standards for testing and qualification are needed.

The primary objective of this Special Issue is to explore insulation system design, testing, diagnostics and monitoring, and the estimation of the remaining lifetimes of medium- and high-voltage power electronics-based devices, as well as the components connected to them. Research areas may include (but are not limited to) the following subjects:

High-voltage power electronics-based test sources:

  • High-voltage amplifiers and power supplies;
  • Resonant and pulse transformer based test circuits;
  • High voltage challenges in power converters;
  • Voltage balancing and series connection of switches;
  • Gate deriver design for high voltage switches.

Insulation aging, remaining lifetime, and diagnostics and monitoring of power electronics-based devices

  • Insulation degradation and aging mechanisms;
  • Impact of high voltage PWM, pulse, harmonics, and combined AC/DC stress on insulation material;
  • Potting material and techniques, and aging of PCBs;
  • PD measurement under high-frequency and pulse stress;
  • Remaining lifetime estimation of power electronics-based devices;
  • Diagnostics and monitoring of medium voltage PE-based devices.

Medium-frequency transformers and power transformers:

  • Insulation system design (oil immersed, dry type, epoxy casting, clearances, etc.);
  • Field grading and bushing design;
  • R, L, C parameters calculation;
  • Loss calculation;
  • High-frequency transformer modeling;
  • Thermal analysis;
  • Testing;
  • Optimization of transformer design.

Power Cables

  • High-voltage cabling of electric aircraft;
  • HVDC cables and their accessories;
  • Insulation aging and space charges;
  • Partial discharge detection and localization;
  • Dynamic cables.

In this Special Issue, original research articles and reviews are welcome. We look forward to receiving your contributions.

Dr. Mohamad Ghaffarian
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Keywords

  • high voltage
  • power electronics
  • high-volatge power electronics-based test sources
  • pulse stress
  • insulation aging
  • remaining lifetime of high-voltage components
  • diagnostics and monitoring
  • medium-frequency transformers
  • power transformers
  • power cables
  • high-voltage issues in electric aircraft

Published Papers (2 papers)

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Research

34 pages, 25979 KiB  
Article
Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations
by Weichuan Zhao, Sohrab Ghafoor, Gijs Willem Lagerweij, Gert Rietveld, Peter Vaessen and Mohamad Ghaffarian Niasar
Electronics 2024, 13(8), 1481; https://doi.org/10.3390/electronics13081481 - 13 Apr 2024
Viewed by 342
Abstract
This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancing techniques include gate signal delay adjustment methods, passive snubbers, passive clamping circuits, and [...] Read more.
This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancing techniques include gate signal delay adjustment methods, passive snubbers, passive clamping circuits, and hybrid solutions. Based on the experimental results, the advantages and disadvantages of each technique are investigated. Combining the gate-balancing core method with an RC snubber, which has proven both technically and commercially attractive, provides a robust solution. If the components are sorted and binned, voltage-balancing techniques may not be necessary, further enhancing the commercial viability of series-connected MOSFETs. An investigation of gate driver topologies yields one crucial conclusion: magnetically isolated gate drivers offer a simple and cost-effective solution for high-frequency (HF) applications (2.5–50 kHz) above 8 kV with an increased number of series devices. Below 8 kV, it is advantageous to move the isolation barrier from the gate drive IC to an optocoupler and isolated supply, allowing for a simple design with commercially available components. Full article
(This article belongs to the Special Issue High-Voltage Technology and Its Applications)
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14 pages, 3775 KiB  
Article
Optimal Design of Voltage Equalization Ring for the 1100 kV DC Voltage Proportional Standard Device Based on the Nation Standard Device Neural Network and Grey Wolf Optimization Algorithm
by Wanjun Zhu, Yin Gao, Liang Qin, Yuqing Duan, Zhigang Bian, Min He and Kaipei Liu
Electronics 2024, 13(7), 1308; https://doi.org/10.3390/electronics13071308 - 31 Mar 2024
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Abstract
The DC voltage ratio standard device is an important tool for calibrating DC voltage transformers. At the 1100 kV voltage level, an increase in electric field intensity will increase the local heat generated inside the device, affecting the accuracy of its measurement. Using [...] Read more.
The DC voltage ratio standard device is an important tool for calibrating DC voltage transformers. At the 1100 kV voltage level, an increase in electric field intensity will increase the local heat generated inside the device, affecting the accuracy of its measurement. Using a suitable grading ring can even out the electric field intensity and reduce the maximum field strength to improve its measurement accuracy. This article mainly optimizes the design of the grading-ring structure of the 1100 kV DC voltage ratio standard device. First, a finite-element model of the 1100 kV DC voltage ratio standard device was built based on ANSYS; the electric field distribution around the voltage divider was calculated and analyzed, and a data set was constructed based on the calculation results. Secondly, for the optimization of electric field strength, this article presents the design of the nation standard device neural network, which learns the relationship between the structural parameters of the toroidal core and the field strength under the PyTorch 1.8 deep learning framework. Due to the strong convergence performance, few parameters, and ease of implementation of the grey wolf optimization algorithm, this study selected this algorithm to optimize the structural parameters of the grading ring. Finally, simulation examples are established in Python for validation. The experimental results indicate that the maximum field strength of the grading ring decreased from 12,161.1348 V/cm to 10,009.2881 V/cm, a reduction of 17.69%. The optimized structural parameters of the grading ring effectively reduced the electric field intensity around the 1100 kV DC voltage proportional standard device, providing a reliable and practical design approach for the selection of the DC voltage ratio standard device. Full article
(This article belongs to the Special Issue High-Voltage Technology and Its Applications)
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