Wide-Band-Gap Devices Enabled High Efficiency and High Power-Density Motor-Drives

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Power Electronics".

Deadline for manuscript submissions: 30 September 2024 | Viewed by 1163

Special Issue Editors


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Guest Editor
Solid-State Power Processing (SP2) Lab, Department of Mechanical and Electrical Systems Engineering, Faculty of Engineering, Kyoto University of Advanced Science, Kyoto 615-8577, Japan
Interests: power electronics; power semiconductor devices; packaging; thermal management
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Guest Editor
Department of Electrical & Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK
Interests: power electronics; electric machines and drives; application of wide-bandgap devices for ultra-efficient and high-density converters; sensorless control of induction motors and permanent magnet motors; wind power generation using doubly fed induction generators and direct-drive permanent magnet generators; high-power, medium-voltage multilevel converter topology and control; bi-directional battery charger and drive train design for electric vehicles; power management in microgrid; more electric aircraft technologies; emi and filter reduction for high power density power conversion systems with multilevel converters and soft-switching techniques

Special Issue Information

Dear Colleagues,

Electric motor drives (EMDs) are a pivotal element of our society, comprising well over half of the total electrical energy usage worldwide in a range of domains (e.g., industry, transportation, renewable energy). They are rapidly gaining importance in numerous growing and upcoming industries and applications (e.g., aerospace, solid state transformers, medium-voltage applications).

Semiconductor power devices are key elements of motor-drive system design, determining the efficiency and volumetric/gravimetric density of the power converters and the machines. The evolutionary trends of EMDs are demanding higher motor voltages and higher fundamental electrical frequencies, pushing established silicon technology to its limits. In the semiconductor arena, disruptive progress was made with the introduction of wide-bandgap (WBG) devices, particularly silicon carbide (SiC) MOSFETs and gallium nitride (GaN) HEMTs. However, their deployment as a straightforward drop-in replacement of Si in established applications has hitherto only demonstrated incremental progress capability and has generated both enthusiasm for the benefits and concerns for the challenges of exploiting in practice their full theoretical potential.

Recently, new and revisited circuit topologies have been proposed, which utilize the high switching speed and frequency capability, high operational temperature and integration-level opportunities offered by WBG semiconductor technologies. This Special Issue aims to collect state-of-the-art R&D results relating to WBG-based motor-drive design, demonstrating significant progress in this area. The focus is not only on the power converters, but also on machine design. Topics of interest include (but are not limited to):

  • Multi-level inverters;
  • Y-Inverter;
  • Current-Source Inverters;
  • Integrated Motor Drives;
  • Innovative machine concepts;
  • High-frequency control solutions (software and hardware);
  • High-boost ratios DC-DC converters;
  • High-reliability applications;
  • Reliability challenges and solutions;
  • Long cable effects at high switching frequencies;
  • Winding insulation and bearing degradation;
  • Multi-domain physical design and design automation.

Prof. Dr. Alberto Castellazzi
Prof. Dr. Xibo Yuan
Guest Editors

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Keywords

  • wide-band-gap semiconductors
  • motor drives
  • high power density
  • Y-Inverter
  • current–source inverter
  • multi-level inverters
  • DC-DC converters

Published Papers (1 paper)

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Research

22 pages, 12670 KiB  
Article
Considerations on the Development of High-Power Density Inverters for Highly Integrated Motor Drives
by Yury Mikhaylov, Ahmed Aboelhassan, Giampaolo Buticchi and Michael Galea
Electronics 2024, 13(2), 355; https://doi.org/10.3390/electronics13020355 - 14 Jan 2024
Cited by 1 | Viewed by 801
Abstract
In transportation electrification, power modules are considered the best choice for power switches to build a high-power inverter. Recently, several studies have presented prototypes that use parallel discrete MOSFETs and show similar overall output capabilities. This paper aims to compare the maximum output [...] Read more.
In transportation electrification, power modules are considered the best choice for power switches to build a high-power inverter. Recently, several studies have presented prototypes that use parallel discrete MOSFETs and show similar overall output capabilities. This paper aims to compare the maximum output power and losses of inverters with different types (surface-mounted, through-hole-mounted and power modules) of commercially available switching devices, and, therefore, discuss the theoretical boundaries of each technology. The numerical analysis relies on detailed power loss and thermal models, with adjustments made for gate current and realistic parameters of the cooling system. The analysis includes two case studies with different targets, including minimum dimensional characteristics and maximum output power. The results demonstrate that discrete MOSFETs can provide improved capabilities in contrast to power modules under certain conditions. Full article
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