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J. Low Power Electron. Appl. 2014, 4(2), 153-167; doi:10.3390/jlpea4020153

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

1
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
2
National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
*
Author to whom correspondence should be addressed.
Received: 28 February 2014 / Revised: 1 June 2014 / Accepted: 3 June 2014 / Published: 20 June 2014
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2013)
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Abstract

The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (Vt) variability, and the memory characteristics have been comparatively investigated. It was experimentally found that the better SCE immunity and a larger memory window are obtained by introducing a high-k Al2O3 blocking layer instead of a SiO2 blocking layer. It was also confirmed that the variability of Vt before and after one program/erase (P/E) cycle is almost independent of the blocking layer materials. View Full-Text
Keywords: charge trapping (CT); flash memory; silicon on insulator (SOI); FinFET; blocking layer; high-k metal gate; variability charge trapping (CT); flash memory; silicon on insulator (SOI); FinFET; blocking layer; high-k metal gate; variability
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Liu, Y.; Nabatame, T.; Matsukawa, T.; Endo, K.; O'uchi, S.; Tsukada, J.; Yamauchi, H.; Ishikawa, Y.; Mizubayashi, W.; Morita, Y.; Migita, S.; Ota, H.; Chikyow, T.; Masahara, M. Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials. J. Low Power Electron. Appl. 2014, 4, 153-167.

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