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J. Low Power Electron. Appl. 2014, 4(2), 138-152; doi:10.3390/jlpea4020138

MOS Current Mode Logic Near Threshold Circuits

Department of Electrical Engineering, University of Rochester, Rochester, NY 14627, USA
This is an extended version of the “Performance Characteristics of 14 nm Near Threshold MCML Circuits” paper that was presented at the IEEE S3S Conference 2013.
Author to whom correspondence should be addressed.
Received: 6 March 2014 / Revised: 29 April 2014 / Accepted: 15 May 2014 / Published: 11 June 2014
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2013)
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Near threshold circuits (NTC) are an attractive and promising technology that provides significant power savings with some delay penalty. The combination of NTC technology with MOS current mode logic (MCML) is examined in this work. By combining MCML with NTC, the constant power consumption of MCML is reduced to leakage power levels that can be tolerated in certain modern applications. Additionally, the speed of NTC is improved due to the high speed nature of MCML technology. A 14 nm Fin field effect transistor (FinFET) technology is used to evaluate these combined circuit techniques. A 32-bit Kogge Stone adder is chosen as a demonstration vehicle for feasibility analysis. MCML with NTC is shown to yield enhanced power efficiency when operated above 1 GHz with a 100% activity factor as compared to standard CMOS. MCML with NTC is more power efficient than standard CMOS beyond 9 GHz over a wide range of activity factors. MCML with NTC also exhibits significantly lower noise levels as compared to standard CMOS. The results of the analysis demonstrate that pairing NTC and MCML is efficient when operating at high frequencies and activity factors. View Full-Text
Keywords: near threshold circuits (NTC); MOS current mode logic (MCML); high performance; power efficiency near threshold circuits (NTC); MOS current mode logic (MCML); high performance; power efficiency

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Shapiro, A.; Friedman, E.G. MOS Current Mode Logic Near Threshold Circuits. J. Low Power Electron. Appl. 2014, 4, 138-152.

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J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
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