MOS Current Mode Logic Near Threshold Circuits†
AbstractNear threshold circuits (NTC) are an attractive and promising technology that provides significant power savings with some delay penalty. The combination of NTC technology with MOS current mode logic (MCML) is examined in this work. By combining MCML with NTC, the constant power consumption of MCML is reduced to leakage power levels that can be tolerated in certain modern applications. Additionally, the speed of NTC is improved due to the high speed nature of MCML technology. A 14 nm Fin field effect transistor (FinFET) technology is used to evaluate these combined circuit techniques. A 32-bit Kogge Stone adder is chosen as a demonstration vehicle for feasibility analysis. MCML with NTC is shown to yield enhanced power efficiency when operated above 1 GHz with a 100% activity factor as compared to standard CMOS. MCML with NTC is more power efficient than standard CMOS beyond 9 GHz over a wide range of activity factors. MCML with NTC also exhibits significantly lower noise levels as compared to standard CMOS. The results of the analysis demonstrate that pairing NTC and MCML is efficient when operating at high frequencies and activity factors.
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Shapiro, A.; Friedman, E.G. MOS Current Mode Logic Near Threshold Circuits. J. Low Power Electron. Appl. 2014, 4, 138-152.
Shapiro A, Friedman EG. MOS Current Mode Logic Near Threshold Circuits. Journal of Low Power Electronics and Applications. 2014; 4(2):138-152.Chicago/Turabian Style
Shapiro, Alexander; Friedman, Eby G. 2014. "MOS Current Mode Logic Near Threshold Circuits." J. Low Power Electron. Appl. 4, no. 2: 138-152.