Next Article in Journal / Special Issue
Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime
Previous Article in Journal / Special Issue
Performance Limits of Nanoelectromechanical Switches (NEMS)-Based Adiabatic Logic Circuits
J. Low Power Electron. Appl. 2014, 4(1), 1-14; doi:10.3390/jlpea4010001
Article

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

1,* , 1
, 2
, 2
, 1,3
, 1
, 3
, 1
, 3
 and 1
Received: 25 October 2013; in revised form: 6 December 2013 / Accepted: 9 December 2013 / Published: 9 January 2014
(This article belongs to the Special Issue Selected Papers from FTFC 2013 Conference)
Download PDF [782 KB, updated 10 January 2014; original version uploaded 9 January 2014]
Abstract: Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.
Keywords: compact modeling; RRAM; OxRAM; design compact modeling; RRAM; OxRAM; design
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Bocquet, M.; Aziza, H.; Zhao, W.; Zhang, Y.; Onkaraiah, S.; Muller, C.; Reyboz, M.; Deleruyelle, D.; Clermidy, F.; Portal, J.-M. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). J. Low Power Electron. Appl. 2014, 4, 1-14.

AMA Style

Bocquet M, Aziza H, Zhao W, Zhang Y, Onkaraiah S, Muller C, Reyboz M, Deleruyelle D, Clermidy F, Portal J-M. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). Journal of Low Power Electronics and Applications. 2014; 4(1):1-14.

Chicago/Turabian Style

Bocquet, Marc; Aziza, Hassen; Zhao, Weisheng; Zhang, Yue; Onkaraiah, Santhosh; Muller, Christophe; Reyboz, Marina; Deleruyelle, Damien; Clermidy, Fabien; Portal, Jean-Michel. 2014. "Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)." J. Low Power Electron. Appl. 4, no. 1: 1-14.


J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert