J. Low Power Electron. Appl. 2013, 3(2), 159-173; doi:10.3390/jlpea3020159
Article

A Digital Auto-Zeroing Circuit to Reduce Offset in Sub-Threshold Sense Amplifiers

1,* email, 2email and 1email
Received: 13 February 2013; in revised form: 8 April 2013 / Accepted: 25 April 2013 / Published: 24 May 2013
(This article belongs to the Special Issue Selected Papers from SubVt 2012 Conference)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Device variability in modern processes has become a major concern in SRAM design leading to degradation of both performance and yield. Variation induced offset in the sense amplifiers requires a larger bitline differential, which slows down SRAM access times and causes increased power consumption. The effect aggravated in the sub-threshold region. In this paper, we propose a circuit that reduces the sense amp offset using an auto-zeroing scheme with automatic temperature, voltage, and aging tracking. The circuit enables flexible tuning of the offset voltage. Measurements taken from a 45 nm test chip show the circuit is able to limit the offset to 20 mV. A 16kB SRAM is designed using the auto-zeroing circuit for the sense amps. The reduction in the total read energy and delay is reported for various configurations of the memory.
Keywords: offset compensation; SRAM; sense amplifier; auto-zeroing
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MDPI and ACS Style

Beshay, P.; Ryan, J.F.; Calhoun, B.H. A Digital Auto-Zeroing Circuit to Reduce Offset in Sub-Threshold Sense Amplifiers. J. Low Power Electron. Appl. 2013, 3, 159-173.

AMA Style

Beshay P, Ryan JF, Calhoun BH. A Digital Auto-Zeroing Circuit to Reduce Offset in Sub-Threshold Sense Amplifiers. Journal of Low Power Electronics and Applications. 2013; 3(2):159-173.

Chicago/Turabian Style

Beshay, Peter; Ryan, Joseph F.; Calhoun, Benton H. 2013. "A Digital Auto-Zeroing Circuit to Reduce Offset in Sub-Threshold Sense Amplifiers." J. Low Power Electron. Appl. 3, no. 2: 159-173.

J. Low Power Electron. Appl. EISSN 2079-9268 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert