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Electronic Test and Measurement Instrumentation: Design and Applications (2nd Edition)
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Electronic Test and Measurement Instrumentation: Design and Applications (2nd Edition)

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Electronic Sensors".

Deadline for manuscript submissions: 30 April 2025 | Viewed by 2906

Special Issue Editors

Prof. Dr. Tomasz Starecki

E-Mail Website
Guest Editor
Institute of Electronic Systems, Faculty of Electronics and Information Technology, Warsaw University of Technology, 00-665 Warsaw, Poland
Interests: photoacoustics (hardware and applications); electronic test and measurement instrumentation (design and applications, hardware, firmware and software; whole systems and single instruments design); embedded systems; microcontrollers (hardware, firmware and applications); project management
Special Issues, Collections and Topics in MDPI journals
Dr. Piotr Z. Wieczorek

E-Mail Website
Guest Editor
Institute of Electronic Systems, Faculty of Electronics and Information Technology, Warsaw University of Technology, 00-665 Warsaw, Poland
Interests: analog electronics; embedded systems; IoT
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Test and measurement instrumentation covers a large portion of the modern electronics and automation fields. Current testing and measurement techniques range from ultra-small, nanometer-scale, semiconductor manufacturing issues to high-power, large-scale devices and systems. Moreover, the domains of testing and instrumentation are not only limited to electronics and circuits but also include photonics, radio electronics (wireless electronics), and many more.

This Special Issue of Sensors aims to present advances in such test and measurement solutions under various domains. Topics include, but are not limited to, the following:

  • Front-end electronics;
  • Signal conditioning;
  • Digital signal processing;
  • Data processing;
  • Control;
  • Communication with sensors and in sensor systems;
  • Energy harvesting.

Prof. Dr. Tomasz Starecki
Dr. Piotr Z. Wieczorek
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • front-end electronics
  • signal conditioning
  • digital signal processing
  • data processing
  • control
  • communication with sensors and in sensor systems
  • energy harvesting

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Related Special Issue

Published Papers (3 papers)

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Research

19 pages, 3611 KiB  
Article
Delineation of Optimized Single and Multichannel Approximate DA-Based Filter Design Using Influential Single MAC Strategy for Trans-Multiplexer
by Britto Pari James, Leung Man-Fai, Mariammal Karuthapandian and Vaithiyanathan Dhandapani
Sensors 2024, 24(22), 7149; https://doi.org/10.3390/s24227149 - 7 Nov 2024
Viewed by 714
Abstract
In this paper, a multichannel FIR filter design based on the Time Division Multiplex (TDM) approach that incorporates one multiply and add unit, regardless of the variable coefficient length and varying channels, by associating the resource sharing doctrine is suggested. A multiplier based [...] Read more.
In this paper, a multichannel FIR filter design based on the Time Division Multiplex (TDM) approach that incorporates one multiply and add unit, regardless of the variable coefficient length and varying channels, by associating the resource sharing doctrine is suggested. A multiplier based on approximate distributed arithmetic (DA) circuits is employed for effective resource optimization. Although no explicit multiplication was conducted in this realization, the radix-8 and radix-4 Booth algorithms are utilized in the DA framework to curtail and optimize the partial products (PPs). Furthermore, the input stream is truncated with an erratum mending unit to roughly construct the partial products. For an aggregation of PPs, an approximate Wallace tree is taken into consideration to further minimize hardware expenses. Consequently, the suggested design’s latency, utilized area, and power usage are largely reduced. The Xilinx Vertex device is expedited, given the synthesis of the suggested multichannel realization with 16 taps, which is simulated using the Verilog formulary. It is observed that the filter structure with one channel produced the desired results, and the system’s frequency can support up to 429 MHz with a reduced area. Utilizing TSMC 180 nm CMOS technology and the Cadence RC compiler, cell-level performance is also achieved. Full article
(This article belongs to the Special Issue Electronic Test and Measurement Instrumentation: Design and Applications (2nd Edition))
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15 pages, 5345 KiB  
Article
Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors
by Taeyeong Kim, Garam Kim, Moon-Kyu Cho, John D. Cressler, Jaeduk Han and Ickhyun Song
Sensors 2024, 24(22), 7130; https://doi.org/10.3390/s24227130 - 6 Nov 2024
Viewed by 876
Abstract
The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under dc stress and its potential impact on the performance of basic analog amplifiers are investigated. In order to properly reflect the stress effects in various circuit applications, the degradations under three different [...] Read more.
The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under dc stress and its potential impact on the performance of basic analog amplifiers are investigated. In order to properly reflect the stress effects in various circuit applications, the degradations under three different configurations (active bias, diode connection, and off state) were experimentally characterized with the stress voltages applied up to 3000 s for each case. Based on the changes in the Gummel response, the degradations in device parameters such as current gain (β), transconductance (gm), and base-to-emitter resistance (rπ) were extracted and compared with the forward-mode counterpart. In addition, with the use of a small-signal equivalent model of a SiGe HBT, simple single-stage analog amplifiers were simulated as representative examples and their circuit-level performance metrics including gain and bandwidth were studied to estimate degradation characteristics with accumulated stress. It was found that transimpedance gain decreases and operation bandwidth increases to different levels due to device degradation, whereas a voltage amplifier exhibited much less changes. Full article
(This article belongs to the Special Issue Electronic Test and Measurement Instrumentation: Design and Applications (2nd Edition))
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15 pages, 13240 KiB  
Article
Finite Element Analysis of Electrostatic Coupling in LISA Pathfinder Inertial Sensors
by Wenyan Zhang, Jungang Lei, Zuolei Wang, Cunhui Li, Shijia Yang, Jian Min and Xuan Wen
Sensors 2024, 24(19), 6189; https://doi.org/10.3390/s24196189 - 24 Sep 2024
Cited by 1 | Viewed by 860
Abstract
In the LISA Pathfinder (LPF) mission, electrostatic noise can reach the femto-Newtonian level despite the fact that the LPF’s sensors are equipped with potential shielding. Most of the existing simulation studies focus on the electrostatic edge effect and related fields, while the simulation [...] Read more.
In the LISA Pathfinder (LPF) mission, electrostatic noise can reach the femto-Newtonian level despite the fact that the LPF’s sensors are equipped with potential shielding. Most of the existing simulation studies focus on the electrostatic edge effect and related fields, while the simulation study of the patch effect is neglected. For that reason, this paper analyzes the basic principle of electrostatic noise and constructs a simulation model for studying the coupling effects of a TM’s residual charge and stray bias voltage. The patch effect and other perturbation factors are simulated by the simulation model with finite element operation, focusing on the suppression effect of the protective ring on the edge effect, the realization of the patch effect in the simulation model, and the possible influence. The results show that electrode area and the spacing between the electrode and the TM together limit the suppression effect of the protective ring on the edge effect. The spatial and temporal variations of the patch effect significantly affect the distributed electric field between the electrodes and the TM, as well as the charge distribution density of the TM. In the worst-case scenario of LPF electrostatic input parameters, the electrostatic noise is about 1.03 × 10−15 m/s2/√Hz at 1 mHz, which is about 6% different from the expected performance estimate. Finally, considering the limitations of multiple environmental factors on the inertial sensors, the present model will be useful to explore the interactive effects of multi-field coupling and to further investigate the impact of low-energy electron charging on the performance of the inertial sensors. Full article
(This article belongs to the Special Issue Electronic Test and Measurement Instrumentation: Design and Applications (2nd Edition))
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