Special Issue "Silicon-Based Nanomaterials: Technology and Applications"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 15 October 2018

Special Issue Editor

Guest Editor
Prof. Dr. Robert W. Kelsall

School of Electronic and Electrical Engineering, Faculty of Engineering, University of Leeds, Leeds LS2 9JT, UK
Website | E-Mail
Phone: +44-(0)113-343-2068
Interests: nanostructured semiconductor devices; electronic, optical and thermal properties; device design and simulation; silicon-based photonic components and systems

Special Issue Information

Dear Colleagues,

Silicon has proved remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide who are developing new configurations, designs and applications of silicon-based nanoscale and nanostructured materials. The purpose of this Special Issue is to bring together the state-of-art in this field. Papers are invited on any of the functional properties of chemically or physically engineered silicon-based nanosystems (including nano-layered systems, nanorods/wires, quantum dots, nanocrystals and self-organised/self-assembled nanostructures). Papers may cover novel fabrication, preparation or processing techniques, novel physical structures, novel properties or performance levels, novel methods for manipulation/control of functional properties, and/or novel application areas.

Prof. Dr. Robert W. Kelsall
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1500 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoelectronics
  • nanophotonics
  • optoelectronics
  • solar cells
  • FETs
  • DRAM
  • non-volatile memory
  • integration
  • interconnects
  • Moore’s Law

Published Papers (3 papers)

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Research

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Open AccessArticle Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices
Nanomaterials 2018, 8(4), 182; https://doi.org/10.3390/nano8040182
Received: 24 February 2018 / Revised: 17 March 2018 / Accepted: 19 March 2018 / Published: 22 March 2018
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Abstract
Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with
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Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. Full article
(This article belongs to the Special Issue Silicon-Based Nanomaterials: Technology and Applications)
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Open AccessArticle Long-Term Mechanical Behavior of Nano Silica Sol Grouting
Nanomaterials 2018, 8(1), 46; https://doi.org/10.3390/nano8010046
Received: 29 November 2017 / Revised: 8 January 2018 / Accepted: 9 January 2018 / Published: 16 January 2018
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Abstract
The longevity of grouting has a significant effect on the safe and sustainable operation of many engineering projects. A 500-day experiment was carried out to study the long-term mechanical behavior of nano silica sol grouting. The nano silica sol was activated with different
[...] Read more.
The longevity of grouting has a significant effect on the safe and sustainable operation of many engineering projects. A 500-day experiment was carried out to study the long-term mechanical behavior of nano silica sol grouting. The nano silica sol was activated with different proportions of a NaCl catalyst and cured under fluctuating temperature and humidity conditions. The mechanical parameters of the grout samples were tested using an electrohydraulic uniaxial compression tester and an improved Vicat instrument. Scanning electron microscope, X-ray diffraction, and ultrasonic velocity tests were carried out to analyze the strength change micro-mechanism. Tests showed that as the catalyst dosage in the grout mix is decreased, the curves on the graphs showing changes in the weight and geometric parameters of the samples over time could be divided into three stages, a shrinkage stage, a stable stage, and a second shrinkage stage. The catalyst improved the stability of the samples and reduced moisture loss. Temperature rise was also a driving force for moisture loss. Uniaxial compressive stress-strain curves for all of the samples were elastoplastic. The curves for uniaxial compression strength and secant modulus plotted against time could be divided into three stages. Sample brittleness increased with time and the brittleness index increased with higher catalyst dosages in the latter part of the curing time. Plastic strength-time curves exhibit allometric scaling. Curing conditions mainly affect the compactness, and then affect the strength. Full article
(This article belongs to the Special Issue Silicon-Based Nanomaterials: Technology and Applications)
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Review

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Open AccessReview Optical Properties of Tensilely Strained Ge Nanomembranes
Nanomaterials 2018, 8(6), 407; https://doi.org/10.3390/nano8060407
Received: 16 April 2018 / Revised: 30 May 2018 / Accepted: 4 June 2018 / Published: 6 June 2018
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Abstract
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of
[...] Read more.
Group-IV semiconductors, which provide the leading materials platform of micro- electronics, are generally unsuitable for light emitting device applications because of their indirect- bandgap nature. This property currently limits the large-scale integration of electronic and photonic functionalities on Si chips. The introduction of tensile strain in Ge, which has the effect of lowering the direct conduction-band minimum relative to the indirect valleys, is a promising approach to address this challenge. Here we review recent work focused on the basic science and technology of mechanically stressed Ge nanomembranes, i.e., single-crystal sheets with thicknesses of a few tens of nanometers, which can sustain particularly large strain levels before the onset of plastic deformation. These nanomaterials have been employed to demonstrate large strain-enhanced photoluminescence, population inversion under optical pumping, and the formation of direct-bandgap Ge. Furthermore, Si-based photonic-crystal cavities have been developed that can be combined with these Ge nanomembranes without limiting their mechanical flexibility. These results highlight the potential of strained Ge as a CMOS-compatible laser material, and more in general the promise of nanomembrane strain engineering for novel device technologies. Full article
(This article belongs to the Special Issue Silicon-Based Nanomaterials: Technology and Applications)
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